Inventor profile of:

Haiting Li

City:

Shanghai

Country:

China

Published Applications:

17

Last publication date:

2020-09-03

Top Assignees for applications by Haiting Li

The entities that hold a legal rights for patent applications filed by inventor Li Haiting:

Recent patent applications by Li Haiting

Haiting Li from Shanghai, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-09-03
US20200280294A1
Electricity

Thin-film bulk acoustic resonator and semiconductor apparatus comprising the same

#2 | 2020-08-20
US20200266790A1
Electricity

Thin-film bulk acoustic resonator and semiconductor apparatus comprising the same

#3 | 2018-07-19
US20180204776A1
Electricity

Backside processed semiconductor device

#4 | 2017-10-05
US20170287908A9
Electricity

METHOD FOR FORMING DEEP TRENCH ISOLATION FOR RF DEVICES ON SOI

#5 | 2017-09-14
US20170264265A1
Electricity

Resonator and related manufacturing method

#6 | 2017-09-14
US20170264264A1
Electricity

Manufacturing of thin-film bulk acoustic resonator and semiconductor apparatus comprising the same

#7 | 2017-09-14
US20170264263A1
Electricity

Manufacturing of thin-film bulk acoustic resonator and semiconductor apparatus comprising the same

#8 | 2017-06-15
US20170170806A1
Electricity

Resonator and related manufacturing method

#9 | 2017-03-09
US20170069707A1
Electricity

Inductor device

#10 | 2016-08-25
US20160247801A1
Electricity

Deep trench isolation for RF devices on SOI

#11 | 2016-07-14
US20160204035A1
Electricity

Backside processed semiconductor device

#12 | 2016-01-28
US20160027665A1
Electricity

Device and method for improving RF performance

#13 | 2015-07-30
US20150214287A1
Electricity

Inductor device and fabrication method

#14 | 2015-07-02
US20150187794A1
Electricity

Method for forming deep trench isolation for RF devices on SOI

#15 | 2014-12-18
US20140367753A1
Electricity

CMOS device with double-sided terminals and method of making the same

#16 | 2010-11-11
US20100283926A1
Physics

Method and resulting capacitor structure for liquid crystal on silicon display devices

#17 | 2005-07-07
US20050148145A1
Electricity

Semiconductor memory cell with buried dopant bit lines and salicided polysilicon word lines isolated by an array of blocks

InventorID:

1003944 ⎘