Williston, Vermont
United States
7
2015-07-30
The entities that hold a legal rights for patent applications filed by inventor Benoit John J.:
John J. Benoit from Williston, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Bipolar junction transistors with self-aligned terminals
#2 | 2015-07-23Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region
#3 | 2015-05-07Bipolar junction transistors with self-aligned terminals
#4 | 2015-04-23Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region
#5 | 2014-12-18In-line measurement of transistor device cut-off frequency
#6 | 2010-12-23Bipolar transistor structure and method including emitter-base interface impurity
#7 | 2010-05-13Optimized device isolation
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