Inventor profile of:

SCOTT WILLIAM JESSEN

City:

ALLEN, Texas

Country:

United States

Published Applications:

21

Last publication date:

2024-04-04

Top Assignees for applications by SCOTT WILLIAM JESSEN

The entities that hold a legal rights for patent applications filed by inventor JESSEN SCOTT WILLIAM:

Recent patent applications by JESSEN SCOTT WILLIAM

SCOTT WILLIAM JESSEN from ALLEN, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-04-04
US20240113156A1
Electricity

THIN FILM RESISTOR MISMATCH IMPROVEMENT USING A SELF-ALIGNED DOUBLE PATTERN (SADP) TECHNIQUE

#2 | 2022-03-03
US20220069067A1
Electricity

Integrated circuits having dielectric layers including an anti-reflective coating

#3 | 2021-05-06
US20210134939A1
Electricity

IC with matched thin film resistors

#4 | 2021-04-01
US20210098565A1
Electricity

Integrated circuits having dielectric layers including an anti-reflective coating

#5 | 2020-10-15
US20200328149A1
Electricity

Methods for etching metal interconnect layers

#6 | 2019-10-03
US20190304786A1
Electricity

Method of fabricating transistors, including ambient oxidizing after etchings into barrier layers and anti-reflecting coatings

#7 | 2017-06-22
US20170178966A1
Electricity

Elongated contacts using litho-freeze-litho-etch process

#8 | 2016-06-30
US20160190156A1
Electricity

Metal on elongated contacts

#9 | 2016-06-30
US20160190016A1
Electricity

Elongated contacts using litho-freeze-litho-etch process

#10 | 2015-11-12
US20150325472A1
Electricity

Alignment to multiple layers

#11 | 2015-06-18
US20150170975A1
Electricity

Elongated contacts using litho-freeze-litho-etch process

#12 | 2015-06-18
US20150170971A1
Electricity

Methodology of forming CMOS gates on the secondary axis using double-patterning technique

#13 | 2015-06-18
US20150170962A1
Electricity

Metal on elongated contacts

#14 | 2014-02-06
US20140035160A1
Electricity

Two-track cross-connect in double-patterned structure using rectangular via

#15 | 2013-02-21
US20130045591A1
Electricity

NEGATIVE TONE DEVELOP PROCESS WITH PHOTORESIST DOPING

#16 | 2012-11-29
US20120302059A1
Electricity

Alignment to multiple layers

#17 | 2012-09-06
US20120223439A1
Electricity

Two-track cross-connect in double-patterned structure using rectangular via

#18 | 2009-06-11
US20090146259A1
Electricity

Sub-resolution assist feature to improve symmetry for contact hole lithography

#19 | 2007-04-12
US20070082425A1
Physics

Using a center pole illumination scheme to improve symmetry for contact hole lithography

#20 | 2007-02-15
US20070035031A1
Electricity

Sub-resolution assist feature to improve symmetry for contact hole lithography

#21 | 2007-02-01
US20070028200A1
Physics

Method for performing place-and-route of contacts and vias in technologies with forbidden pitch requirements

InventorID:

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