James Mac FREITAG

Read Sensor With a Layer Having an Adjustable Etching Rate

Dual Free Layer TMR Reader with Shaped Rear Bias and Methods of Forming Thereof

Shield Designs for Two Dimensional Magnetic Recording Read Heads

Pinned Shield with Controllable Exchange Bias Field

Pinned shield with controllable exchange bias field

Spin Orbit Torque (SOT) Device Having a Topological Insulator Layer and a Diffusion Barrier Layer

Recording head with a multilayer spin torque element having positive and negative beta materials

Read sensor with ordered heusler alloy free layer and semiconductor barrier layer

Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) texture

Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) texture

Spin torque oscillator with enhanced spin polarizer

Spin torque oscillator with multilayer seed for improved performance and reliability

Spintronic devices with self-cooling function

Material having both negative spin polarization and negative anisotropy

Magnetic recording devices having negative polarization layer to enhance spin-transfer torque

Spintronic device having negative interface spin scattering

Methods and apparatus of high moment free layers for magnetic tunnel junctions

Magnetic recording devices having negative polarization layer to enhance spin-transfer torque

MAMR head with synthetic antiferromagnetic (SAF) coupled notch

Seed layer for spin torque oscillator in microwave assisted magnetic recording device

Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write head

Spin transfer torque (STT) device with template layer for Heusler alloy magnetic layers

Reversed mode spin torque oscillator with shaped field generation layer

Spin transfer torque device with oxide layer beneath the seed layer

Reversed mode spin torque oscillator with shaped field generation layer

Spin torque oscillator device including a high damping field generation layer or a damping enhancing capping layer

Spin transfer torque device with oxide layer beneath the seed layer

Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write head

Spin transfer torque (STT) device with template layer for heusler alloy magnetic layers

Spin transfer torque device with oxide layer beneath the seed layer

Spin transfer torque (STT) device with multilayer seed layers for magnetic recording and memory

Magnetic tunnel junction (MTJ) free layer damping reduction

Magnetic tunnel junction (MTJ) free layer damping reduction

Magnetic tunnel junction (MTJ) free layer damping reduction

Magnetic tunnel junction (MTJ) free layer damping reduction

RECESSED IRMN READER SENSOR DESIGN WITH HIGH HK APPLIED TO BOTH REFERENCE AND PIN LAYERS

Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion

Interlayer coupling field control in tunneling magnetoresistive read heads

Recessed IRMN reader process

TMR/CPP reader for narrow reader gap application

Capping materials for magnetic read head sensor

Narrow read-gap head with recessed afm

MAGNETORESISTIVE SENSOR HAVING AN ENHANCED FREE LAYER STABILIZATION MECHANISM

Magnetoresistive sensor with nitrogenated hard bias layer for improved coercivity

Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers

Magnetoresistive sensor having an anisotropic hard bias with high coercivity

MAGNETORESISTIVE SENSOR HAVING A HARD BIAS BUFFER LAYER, SEED LAYER STRUCTURE PROVIDING EXCEPTIONALLY HIGH MAGNETIC ORIENTATION RATIO

Magnetic sensor with extended free layer and overlaid leads

Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges

Magnetoresistive sensor having shape enhanced pinning and low lead resistance

Magnetoresistive sensor having biasing AFM layer in contact with free layer and a track width defined by a lead contact area

Laminated magnetic structure for use in a perpendicular magnetic write head

Read sensors of the CPP type having nitrogenated hard bias layers and method of making the same

Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device

High coercivity hard magnetic seedlayer

Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip

Seedlayer for high hard bias layer coercivity

Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structure

Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinning

Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor

Read sensors having nitrogenated hard bias layers and method of making the same

CPP magnetoresistive sensor having a reduced, shield defined track width

Method of fabricating a thin film magnetic sensor on a wafer

Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement

Magnetoresistive sensor having an anisotropic hard bias without a buffer layer

Magnetoresistive sensor having a shape enhanced pinned layer

Method of manufacturing high sensitivity spin valve designs with ion beam treatment