Inventor profile of:

Meng Wang

City:

Wuhan

Country:

China

Published Applications:

17

Last publication date:

2026-06-04

Top Assignees for applications by Meng Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Meng:

Recent patent applications by Wang Meng

Meng Wang from Wuhan, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-06-04
US20260156803A1
Electricity

SEMICONDUCTOR DEVICES AND MANUFACTURING METHODS THEREOF, AND MEMORY SYSTEMS

#2 | 2026-05-21
US20260139220A1
Chemistry; metallurgy

LACTICASEIBACILLUS RHAMNOSUS MBP01 AND COMBINATION THEREOF FOR PREVENTING AND TREATING IRRITABLE BOWEL SYNDROME

#3 | 2025-11-06
US20250344469A1
Electricity

SEMICONDUCTOR STRUCTURES AND FABRICATING METHODS THEREOF

#4 | 2025-10-16
US20250324568A1
Electricity

MANAGING STORAGE NODE CONTACT STRUCTURES IN SEMICONDUCTOR DEVICES

#5 | 2025-10-02
US20250311321A1
Electricity

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

#6 | 2025-01-16
US20250022851A1
Electricity

FLIP-CHIP STACKING STRUCTURES AND METHODS FOR FORMING THE SAME

#7 | 2025-01-16
US20250022850A1
Electricity

FLIP-CHIP STACKING STRUCTURES AND METHODS FOR FORMING THE SAME

#8 | 2022-08-11
US20220254755A1
Electricity

Flip-chip stacking structures and methods for forming the same

#9 | 2022-07-28
US20220238556A1
Electricity

Method for forming channel hole plug of three-dimensional memory device

#10 | 2022-03-17
US20220084954A1
Electricity

Marking pattern in forming staircase structure of three-dimensional memory device

#11 | 2021-12-09
US20210384141A1
Electricity

Marking pattern in forming staircase structure of three-dimensional memory device

#12 | 2021-04-08
US20210104469A1
Electricity

Marking pattern in forming staircase structure of three-dimensional memory device

#13 | 2020-12-31
US20200411446A1
Electricity

Marking pattern in forming staircase structure of three-dimensional memory device

#14 | 2020-07-30
US20200243561A1
Electricity

Methods for solving epitaxial growth loading effect at different pattern density regions

#15 | 2019-11-21
US20190355739A1
Electricity

Methods for solving epitaxial growth loading effect at different pattern density regions

#16 | 2019-10-24
US20190326314A1
Electricity

Method for forming channel hole plug of three-dimensional memory device

#17 | 2015-02-12
US20150043055A1
Physics

Method for compensating for wavelength shift in wavelength selective switch, and device therefor

InventorID:

1064460 ⎘