Grenoble
France
15
2018-11-08
The entities that hold a legal rights for patent applications filed by inventor Morin Pierre:
Pierre Morin from Grenoble, FR has applied for patents for these inventions. The list has both pending applications and granted patents:
Phase-change memory
#2 | 2018-10-18Phase change memory
#3 | 2018-01-25Semiconductor device with fin and related methods
#4 | 2018-01-04Semiconductor device including optimized elastic strain buffer
#5 | 2017-11-30Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate
#6 | 2017-09-14Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor
#7 | 2017-09-14Method of manufacturing a structure having one or several strained semiconducting zones that may for transistor channel regions
#8 | 2017-08-03Method to form localized relaxed substrate by using condensation
#9 | 2017-07-13Co-integration of tensile silicon and compressive silicon germanium
#10 | 2017-06-01INTEGRATED TENSILE STRAINED SILICON NFET AND COMPRESSIVE STRAINED SILICON-GERMANIUM PFET IMPLEMENTED IN FINFET TECHNOLOGY
#11 | 2017-01-12Semiconductor device with fin and related methods
#12 | 2013-02-28Insulation wall between transistors on SOI
#13 | 2007-09-20Reduction of threshold voltage instabilities in a MOS transistor
#14 | 2007-03-29Semiconductor device comprising at least one MOS transistor having an etch stop layer, and corresponding fabrication process
#15 | 2007-03-06Semiconductor device with MOS transistors with an etch-stop layer having an improved residual stress level and method for fabricating such a semiconductor device
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