Inventor profile of:

Marko J. Tadjer

City:

Springfield, Virginia

Country:

United States

Published Applications:

18

Last publication date:

2021-01-07

Top Assignees for applications by Marko J. Tadjer

The entities that hold a legal rights for patent applications filed by inventor Tadjer Marko J.:

Recent patent applications by Tadjer Marko J.

Marko J. Tadjer from Springfield, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-01-07
US20210005721A1
Electricity

Heterojunction devices and methods for fabricating the same

#2 | 2020-08-06
US20200251389A1
Electricity

UV laser slicing of Ξ²-GaOby micro-crack generation and propagation

#3 | 2019-11-28
US20190360117A1
Chemistry; metallurgy

Diamond on nanopatterned substrate

#4 | 2019-08-15
US20190252501A1
Electricity

Diamond air bridge for thermal management of high power devices

#5 | 2019-05-23
US20190157181A1
Electricity

Diamond air bridge for thermal management of high power devices

#6 | 2018-11-01
US20180315820A1
Electricity

Heterojunction devices and methods for fabricating the same

#7 | 2017-11-23
US20170338332A1
Electricity

Damage-free plasma-enhanced CVD passivation of AlGaN/GaN high electron mobility transistors

#8 | 2017-11-16
US20170330950A1
Electricity

Metal nitride alloy contact for semiconductor

#9 | 2017-09-14
US20170261376A1
Physics

Method of Making a Variable Emittance Window

#10 | 2017-03-30
US20170092724A1
Electricity

Removal of basal plane dislocations from silicon carbide substrate surface by high temperature annealing and preserving surface morphology

#11 | 2016-07-21
US20160211341A1
Electricity

Transistor with diamond gate

#12 | 2015-12-17
US20150362763A1
Physics

Variable Emittance Window

#13 | 2015-12-17
US20150362374A1
Physics

Atomic Layer Deposition of Vanadium Oxide for Microbolometer and Imager

#14 | 2015-12-03
US20150348866A1
Electricity

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

#15 | 2015-10-08
US20150287613A1
Electricity

Basal plane dislocation elimination in 4Hβ€”SiC by pulsed rapid thermal annealing

#16 | 2015-06-04
US20150155166A1
Electricity

Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology

#17 | 2015-03-05
US20150060947A1
Electricity

Transistor with diamond gate

#18 | 2014-09-18
US20140264777A1
Electricity

Nanocrystalline diamond three-dimensional films in patterned semiconductor substrates

InventorID:

1084002 ⎘