Inventor profile of:

John Moore

City:

Boise, Idaho

Country:

United States

Published Applications:

22

Last publication date:

2022-05-19

Top Assignees for applications by John Moore

The entities that hold a legal rights for patent applications filed by inventor Moore John:

Recent patent applications by Moore John

John Moore from Boise, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2022-05-19
US20220157753A1
Electricity

Semiconductor memory device structure

#2 | 2020-11-12
US20200357761A1
Electricity

Semiconductor memory device structure

#3 | 2019-10-17
US20190319001A1
Electricity

Semiconductor memory device structure

#4 | 2017-07-06
US20170194275A1
Electricity

Semiconductor memory device structure

#5 | 2016-01-28
US20160027748A1
Electricity

Memory device structure

#6 | 2015-03-05
US20150061138A1
Electricity

Method of forming a memory device

#7 | 2012-02-02
US20120025379A1
Electricity

Method of forming a memory device

#8 | 2010-12-02
US20100304544A1
Electricity

Method of forming a bond pad

#9 | 2008-12-04
US20080299701A1
Electricity

Front-end processing of nickel plated bond pads

#10 | 2006-10-19
US20060231823A1
Electricity

Structure for amorphous carbon based non-volatile memory

#11 | 2006-10-05
US20060219994A1
Electricity

Structure for amorphous carbon based non-volatile memory

#12 | 2006-09-14
US20060205145A1
Electricity

Front-end processing of nickel plated bond pads

#13 | 2006-02-23
US20060038212A1
Electricity

Structure for amorphous carbon based non-volatile memory

#14 | 2006-02-02
US20060022352A1
Electricity

Front-end processing of nickel plated bond pads

#15 | 2005-08-30
US10087744
-

Variable resistance memory and method for sensing same

#16 | 2005-08-18
US20050180208A1
Physics

Skewed sense AMP for variable resistance memory sensing

#17 | 2005-07-07
US20050146958A1
Physics

Rewrite prevention in a variable resistance memory

#18 | 2005-06-21
US10035197
-

PCRAM rewrite prevention

#19 | 2005-05-17
US10369621
-

Apparatus and method for dual cell common electrode PCRAM memory device

#20 | 2005-05-03
US10434087
-

Skewed sense AMP for variable resistance memory sensing

#21 | 2005-04-19
US10680161
-

PCRAM rewrite prevention

#22 | 2005-03-15
US10075390
-

Method to alter chalcogenide glass for improved switching characteristics

InventorID:

1084168 ⎘