Ossining, New York
United States
26
2018-11-01
The entities that hold a legal rights for patent applications filed by inventor D'Emic Christopher P.:
Christopher P. D'Emic from Ossining, US has applied for patents for these inventions. The list has both pending applications and granted patents:
HETERO-INTEGRATION OF III-N MATERIAL ON SILICON
#2 | 2018-04-19Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base
#3 | 2017-03-30Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base
#4 | 2017-03-30Hetero-integration of III-N material on silicon
#5 | 2016-10-13Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base
#6 | 2016-10-13Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base
#7 | 2016-03-24LATERAL BIPOLAR TRANSISTOR WITH BASE EXTENSION REGION
#8 | 2016-01-21Hetero-integration of III-N material on silicon
#9 | 2015-05-21Field effect transistor-based bio-sensor
#10 | 2014-06-26Field effect transistor-based bio-sensor
#11 | 2014-06-26Field effect transistor-based bio sensor
#12 | 2014-05-15Determination of isoelectric points of biomolecules using capacitive sensors
#13 | 2013-11-19Germanium lateral bipolar junction transistor
#14 | 2013-10-15Germanium lateral bipolar junction transistor
#15 | 2013-10-03SOI lateral bipolar junction transistor having a wide band gap emitter contact
#16 | 2013-10-03SOI LATERAL BIPOLAR JUNCTION TRANSISTOR HAVING A WIDE BAND GAP EMITTER CONTACT
#17 | 2013-02-28SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF SEMICONDUCTOR SUBSTRATE
#18 | 2013-02-28SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF SEMICONDUCTOR SUBSTRATE
#19 | 2008-11-27Method of forming metal/high-Îș gate stacks with high mobility
#20 | 2008-01-24Semiconductor device structures (gate stacks) with charge compositions
#21 | 2006-12-28Method of forming metal/high-k gate stacks with high mobility
#22 | 2006-09-14Thin germanium oxynitride gate dielectric for germanium-based devices
#23 | 2005-12-22Method of forming metal/high-k gate stacks with high mobility
#24 | 2005-05-17Method for improved plasma nitridation of ultra thin gate dielectrics
#25 | 2005-04-28Nitrided ultra thin gate dielectrics
#26 | 2005-03-31Thin germanium oxynitride gate dielectric for germanium-based devices
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