Inventor profile of:

Hung-Ming Chen

City:

Hsinchu

Country:

Taiwan

Published Applications:

17

Last publication date:

2025-06-19

Top Assignees for applications by Hung-Ming Chen

The entities that hold a legal rights for patent applications filed by inventor Chen Hung-Ming:

Recent patent applications by Chen Hung-Ming

Hung-Ming Chen from Hsinchu, TW has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-06-19
US20250200178A1
Physics

COMPUTER VIRUS INTERCEPTION METHOD, SYSTEM AND COMPUTER PROGRAM PRODUCT

#2 | 2024-12-05
US20240405983A1
Electricity

Cyber Security Authentication Method for Displayless Networking Device

#3 | 2024-09-12
US20240305462A1
Electricity

Authentication Information Manager Computer Program Product and Device

#4 | 2015-03-05
US20150067632A1
Physics

Efficient analog layout prototyping by layout reuse with routing preservation

#5 | 2014-11-06
US20140327091A1
Electricity

Fin field effect transistor

#6 | 2014-06-26
US20140179077A1
Electricity

Method of forming semiconductor device including silicide layers

#7 | 2014-01-02
US20140001574A1
Electricity

Silicide formation and associated devices

#8 | 2013-10-24
US20130280899A1
Electricity

Silicide formation and associated devices

#9 | 2013-09-05
US20130228865A1
Electricity

Fin held effect transistor

#10 | 2013-03-14
US20130062669A1
Electricity

Silicide formation and associated devices

#11 | 2012-04-19
US20120091538A1
Electricity

FinFET and method of fabricating the same

#12 | 2011-09-29
US20110233679A1
Electricity

Integrated circuit including FINFETs and methods for forming the same

#13 | 2011-04-21
US20110093828A1
Electricity

Pin-out designation method for package-board codesign

#14 | 2011-03-24
US20110068405A1
Electricity

Fin structure of fin field effect transistor

#15 | 2009-09-17
US20090235210A1
Physics

Orientation optimization method of 2-pin logic cell

#16 | 2008-05-01
US20080102573A1
Electricity

CMOS device with raised source and drain regions

#17 | 2008-02-07
US20080029831A1
Electricity

CMOS devices with graded silicide regions

InventorID:

1091059 ⎘