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Inventor profile of:

Daisuke WATANABE

City:

Seoul

Country:

South Korea

Published Applications:

Last publication date:

2019-10-31

Top Assignees for applications by Daisuke WATANABE

The entities that hold a legal rights for patent applications filed by inventor WATANABE Daisuke:

Toshiba Memory Corporation 13 Tokyo, Japan
Kabushiki Kaisha Toshiba 11 Tokyo, Japan
SK HYNIX INC. 2 Icheon-si, South Korea
SK HYNIX INC. 1 Gyeonggi-do, South Korea
SK hynix Inc. 1 Icheon-si Gyeonggi-do, South Korea

Recent patent applications by WATANABE Daisuke

Daisuke WATANABE from Seoul, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-10-31

US20190334081A1

Electricity

Magnetoresistive memory device

#2 | 2019-08-22

US20190259438A1

Physics

Magnetoresistive memory device with different write pulse patterns

#3 | 2019-01-17

US20190019841A1

Electricity

Semiconductor device having rare earth oxide layer and method of manufacturing the same

#4 | 2018-07-19

US20180205006A1

Electricity

MAGNETORESISTIVE MEMORY DEVICE

#5 | 2018-03-15

US20180076383A1

Electricity

Magnetic memory device

#6 | 2018-03-15

US20180076262A1

Electricity

SEMICONDUCTOR DEVICE HAVING RARE EARTH OXIDE LAYER AND METHOD OF MANUFACTURING THE SAME

#7 | 2018-03-15

US20180075895A1

Physics

Magnetoresistive memory device with different write pulse patterns

#8 | 2017-09-14

US20170263858A1

Electricity

Magnetic memory device with sidewall layer containing boron and manufacturing method thereof

#9 | 2017-09-14

US20170263857A1

Electricity

Magnetoresistive memory device

#10 | 2017-09-14

US20170263855A1

Electricity

Magnetic storage device and manufacturing method of magnetic storage device

#11 | 2017-09-14

US20170263680A1

Electricity

MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME

#12 | 2017-09-14

US20170263676A1

Electricity

Magnetoresistive element and memory device

#13 | 2016-12-29

US20160380182A1

Electricity

Magnetoresistive element

#14 | 2016-09-01

US20160254442A1

Electricity

Magnetoresistive memory device

#15 | 2016-06-09

US20160163968A1

Electricity

Magnetoresistive element and magnetic random access memory

#16 | 2016-05-12

US20160130693A1

Chemistry; metallurgy

METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING APPARATUS OF THE SAME

#17 | 2016-04-07

US20160099408A1

Electricity

MANUFACTURING METHOD FOR INSULATING FILM AND MANUFACTURING APPARATUS FOR THE SAME

#18 | 2016-04-07

US20160099288A1

Electricity

Magnetic memory and manufacturing method of the same

#19 | 2016-04-07

US20160099287A1

Electricity

Method of manufacturing a magnetoresistive memory device

#20 | 2016-03-10

US20160072046A1

Electricity

Magnetoresistive element and manufacturing method thereof

#21 | 2015-09-17

US20150263271A1

Electricity

Magnetoresistive element and manufacturing method of the same

#22 | 2015-09-17

US20150259788A1

Chemistry; metallurgy

SPUTTERING APPARATUS AND MANUFACTURING METHOD OF MAGNETORESISTIVE ELEMENT

#23 | 2015-03-12

US20150070128A1

Electricity

Magnetoresistive element and magnetic random access memory

#24 | 2015-03-12

US20150069554A1

Electricity

MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME

#25 | 2015-03-12

US20150069553A1

Electricity

Magnetic memory and method for manufacturing the same

#26 | 2015-03-12

US20150069544A1

Electricity

MAGNETO-RESISTIVE ELEMENT

#27 | 2015-03-12

US20150069543A1

Electricity

Tunneling magnetoresistive element having a high MR ratio

#28 | 2015-03-12

US20150069542A1

Electricity

Magneto-resistive element having a ferromagnetic layer containing boron

#29 | 2015-03-12

US20150068887A1

Chemistry; metallurgy

MANUFACTURING METHOD OF MAGNETORESISTIVE ELEMENT AND MANUFACTURING APPARATUS OF THE SAME

InventorID:

1092489 ⎘