Tempe, Arizona
United States
21
2020-06-11
The entities that hold a legal rights for patent applications filed by inventor Mudholkar Mihir:
Mihir Mudholkar from Tempe, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Method of manufacturing a semiconductor component
#2 | 2020-04-02METHOD FOR FORMING TRENCH SEMICONDUCTOR DEVICE HAVING SCHOTTKY BARRIER STRUCTURE
#3 | 2020-02-06Method for forming trench semiconductor device having Schottky barrier structure
#4 | 2020-01-02Termination structure for insulated gate semiconductor device and method
#5 | 2019-12-19Trench semiconductor device having multiple active trench depths and method
#6 | 2019-10-24Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
#7 | 2019-10-08Termination structure for insulated gate semiconductor device and method
#8 | 2019-09-19Schottky device and method of manufacture
#9 | 2019-08-01Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
#10 | 2017-11-09Methods for manufacturing a Schottky device with mesa regions in-between conductive trenches and having multi-concentration doping profiles
#11 | 2017-10-05Method of forming trench semiconductor device having multiple trench depths
#12 | 2017-03-16Semiconductor device and manufacturing method thereof
#13 | 2017-01-26Semiconductor component and method of manufacture
#14 | 2016-11-03Half-bridge HEMT circuit and an electronic package including the circuit
#15 | 2016-09-08Trench semiconductor device having multiple active trench depths and method
#16 | 2016-09-08Trench semiconductor device having multiple trench depths and method
#17 | 2016-06-16Schottky device and method of manufacture
#18 | 2015-08-27Semiconductor device and manufacturing method thereof
#19 | 2015-08-27Semiconductor device and manufacturing method thereof
#20 | 2015-08-20Schottky device and method of manufacture
#21 | 2015-03-26Schottky device having conductive trenches and a multi-concentration doping profile therebetween
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