Inventor profile of:

Giorgio Servalli

City:

Ciserano

Country:

Italy

Published Applications:

18

Last publication date:

2018-04-26

Top Assignees for applications by Giorgio Servalli

The entities that hold a legal rights for patent applications filed by inventor Servalli Giorgio:

Recent patent applications by Servalli Giorgio

Giorgio Servalli from Ciserano, IT has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-04-26
US20180114813A1
Electricity

DOUBLE PATTERNING METHOD TO FORM SUB-LITHOGRAPHIC PILLARS

#2 | 2015-04-23
US20150108422A1
Electricity

DOUBLE PATTERNING METHOD TO FORM SUB-LITHOGRAPHIC PILLARS

#3 | 2011-12-22
US20110312153A1
Electricity

Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling and device thus obtained

#4 | 2011-10-13
US20110248382A1
Electricity

Double patterning method for creating a regular array of pillars with dual shallow trench isolation

#5 | 2011-02-17
US20110039391A1
Electricity

Fabricating bipolar junction select transistors for semiconductor memories

#6 | 2010-12-09
US20100308296A1
Electricity

PHASE CHANGE MEMORY CELL WITH SELF-ALIGNED VERTICAL HEATER

#7 | 2010-06-24
US20100155894A1
Electricity

Fabricating bipolar junction select transistors for semiconductor memories

#8 | 2010-02-25
US20100047980A1
Electricity

Process for forming differential spaces in electronics device integrated on a semiconductor substrate

#9 | 2008-10-30
US20080266929A1
Physics

Reference cell layout with enhanced RTN immunity

#10 | 2008-09-04
US20080211009A1
Electricity

Process for manufacturing an electronic device integrated on semiconductor substrate comprising non volatile floating gate memories and an associated circuitry and corresponding electronic device

#11 | 2008-08-28
US20080206945A1
Electricity

PROCESS FOR FORMING DIFFERENTIAL SPACES IN ELECTRONICS DEVICE INTEGRATED ON A SEMICONDUCTOR SUBSTRATE

#12 | 2007-08-09
US20070181933A1
Electricity

NON-VOLATILE MEMORY ELECTRONIC DEVICE

#13 | 2007-02-13
US10672293
-

Integrated resistive elements with silicidation protection

#14 | 2006-08-17
US20060180850A1
Electricity

Process for manufacturing a memory with local electrical contact between the source line and the well

#15 | 2006-07-27
US20060166439A1
Electricity

Method for manufacturing electronic non-volatile memory devices integrated in a semiconductor substrate

#16 | 2006-07-27
US20060166438A1
Electricity

Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling and device thus obtained

#17 | 2006-06-29
US20060141730A1
Electricity

Process for manufacturing integrated resistive elements with silicidation protection

#18 | 2005-06-07
US10449761
-

Test structure for the measurement of contact to gate distance in non-volatile memory devices and corresponding test method

InventorID:

1134171 ⎘