Ciserano
Italy
18
2018-04-26
The entities that hold a legal rights for patent applications filed by inventor Servalli Giorgio:
Giorgio Servalli from Ciserano, IT has applied for patents for these inventions. The list has both pending applications and granted patents:
DOUBLE PATTERNING METHOD TO FORM SUB-LITHOGRAPHIC PILLARS
#2 | 2015-04-23DOUBLE PATTERNING METHOD TO FORM SUB-LITHOGRAPHIC PILLARS
#3 | 2011-12-22Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling and device thus obtained
#4 | 2011-10-13Double patterning method for creating a regular array of pillars with dual shallow trench isolation
#5 | 2011-02-17Fabricating bipolar junction select transistors for semiconductor memories
#6 | 2010-12-09PHASE CHANGE MEMORY CELL WITH SELF-ALIGNED VERTICAL HEATER
#7 | 2010-06-24Fabricating bipolar junction select transistors for semiconductor memories
#8 | 2010-02-25Process for forming differential spaces in electronics device integrated on a semiconductor substrate
#9 | 2008-10-30Reference cell layout with enhanced RTN immunity
#10 | 2008-09-04Process for manufacturing an electronic device integrated on semiconductor substrate comprising non volatile floating gate memories and an associated circuitry and corresponding electronic device
#11 | 2008-08-28PROCESS FOR FORMING DIFFERENTIAL SPACES IN ELECTRONICS DEVICE INTEGRATED ON A SEMICONDUCTOR SUBSTRATE
#12 | 2007-08-09NON-VOLATILE MEMORY ELECTRONIC DEVICE
#13 | 2007-02-13Integrated resistive elements with silicidation protection
#14 | 2006-08-17Process for manufacturing a memory with local electrical contact between the source line and the well
#15 | 2006-07-27Method for manufacturing electronic non-volatile memory devices integrated in a semiconductor substrate
#16 | 2006-07-27Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling and device thus obtained
#17 | 2006-06-29Process for manufacturing integrated resistive elements with silicidation protection
#18 | 2005-06-07Test structure for the measurement of contact to gate distance in non-volatile memory devices and corresponding test method
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