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Inventor profile of:

Pierre Mur

City:

Crolles

Country:

France

Published Applications:

10

Last publication date:

2015-07-30

Top Assignees for applications by Pierre Mur

The entities that hold a legal rights for patent applications filed by inventor Mur Pierre:

Commissariat A L'Energie Atomique 5 Paris, France
Commissariat A L'Energie Atomique Et Aux Energies Alternatives 3 Paris, France
Commissariat à I' énergie atomique et aux énergies alternatives 1 Paris, France
ATMEL ROUSSET 1 PARIS, France
COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 1 Paris, France
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT 1 Paris, France

Recent patent applications by Mur Pierre

Pierre Mur from Crolles, FR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-07-30

US20150214392A1

PHOTOVOLTAIC CELL HAVING A HETEROJUNCTION AND METHOD FOR MANUFACTURING SUCH A CELL

#2 | 2013-02-28

US20130052772A1

Method of manufacturing an optical reflector with semiconductor nanocrystals

#3 | 2012-11-22

US20120291861A1

Photovoltaic cell, including a crystalline silicon oxide passivation thin film, and method for producing same

#4 | 2012-11-15

US20120288985A1

Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate

#5 | 2009-10-01

US20090246510A1

METALLIC NANOCRYSTAL PATTERNING

#6 | 2009-10-01

US20090243048A1

Chemistry; metallurgy

METALLIC NANOCRYSTAL ENCAPSULATION

#7 | 2009-09-03

US20090221447A1

Chemistry; metallurgy

Nanostructured device

#8 | 2008-12-25

US20080318366A1

Performing operations; transporting

Method for producing a support for the growth of localised elongated nanostructures

#9 | 2006-01-26

US20060019459A1

Chemistry; metallurgy

Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision

#10 | 2005-09-29

US20050215071A1

Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy

InventorID:

115015 ⎘