Inventor profile of:

Frank Wirbeleit

City:

Dresden

Country:

Germany

Published Applications:

26

Last publication date:

2013-07-11

Top Assignees for applications by Frank Wirbeleit

The entities that hold a legal rights for patent applications filed by inventor Wirbeleit Frank:

Recent patent applications by Wirbeleit Frank

Frank Wirbeleit from Dresden, DE has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2013-07-11
US20130175610A1
Electricity

TRANSISTOR WITH STRESS ENHANCED CHANNEL AND METHODS FOR FABRICATION

#2 | 2013-02-28
US20130052779A1
Electricity

Fabrication of a semiconductor device with extended epitaxial semiconductor regions

#3 | 2012-08-02
US20120193724A1
Electricity

Static RAM cell design and multi-contact regime for connecting double channel transistors

#4 | 2011-12-01
US20110294269A1
Electricity

Transistor with embedded strain-inducing material formed in diamond-shaped cavities based on a pre-amorphization

#5 | 2011-09-15
US20110223733A1
Electricity

Method for forming a strained transistor by stress memorization based on a stressed implantation mask

#6 | 2011-04-07
US20110080772A1
Electricity

Body controlled double channel transistor and circuits comprising the same

#7 | 2010-08-12
US20100203698A1
Electricity

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

#8 | 2010-03-04
US20100052069A1
Electricity

Static RAM cell design and multi-contact regime for connecting double channel transistors

#9 | 2009-12-31
US20090321835A1
Electricity

Three-dimensional transistor with double channel configuration

#10 | 2009-09-24
US20090236667A1
Electricity

Semiconductor device comprising isolation trenches inducing different types of strain

#11 | 2009-09-03
US20090221115A1
Electricity

Reduction of memory instability by local adaptation of re-crystallization conditions in a cache area of a semiconductor device

#12 | 2009-08-06
US20090197381A1
Electricity

Method for selectively forming strain in a transistor by a stress memorization technique without adding additional lithography steps

#13 | 2009-08-06
US20090194824A1
Electricity

Body controlled double channel transistor and circuits comprising the same

#14 | 2009-01-01
US20090004799A1
Electricity

Method of forming a semiconductor structure comprising a formation of at least one sidewall spacer structure

#15 | 2008-12-04
US20080299733A1
Electricity

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTATION OF IONS IN A MATERIAL LAYER TO BE ETCHED

#16 | 2008-10-23
US20080258175A1
Electricity

Stressed MOS device

#17 | 2008-10-02
US20080242040A1
Electricity

Method of forming a semiconductor structure

#18 | 2008-08-12
US11269241
-

Stressed MOS device and method for its fabrication

#19 | 2008-07-03
US20080158541A1
Physics

Inline stress evaluation in microstructure devices

#20 | 2008-04-03
US20080079085A1
Electricity

Method of making a semiconductor device comprising isolation trenches inducing different types of strain

#21 | 2008-02-12
US11323290
-

Semiconductor device having nanowire contact structures and method for its fabrication

#22 | 2008-01-31
US20080026572A1
Electricity

Method for forming a strained transistor by stress memorization based on a stressed implantation mask

#23 | 2008-01-31
US20080023692A1
Electricity

Formation of transistor having a strained channel region including a performance enhancing material composition utilizing a mask pattern

#24 | 2007-08-02
US20070176246A1
Electricity

SRAM cells including self-stabilizing transistor structures

#25 | 2007-03-29
US20070072380A1
Electricity

Methods for fabrication of a stressed MOS device

#26 | 2006-11-30
US20060270202A1
Electricity

TECHNIQUE FOR REDUCING SILICIDE NON-UNIFORMITIES BY ADAPTING A VERTICAL DOPANT PROFILE

InventorID:

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