Linden
Belgium
68
2025-08-07
The entities that hold a legal rights for patent applications filed by inventor van Dal Mark:
Mark van Dal from Linden, BE has applied for patents for these inventions. The list has both pending applications and granted patents:
COMPLEMENTARY MOS FETS VERTICALLY ARRANGED AND INCLUDING MULTIPLE DIELECTRIC LAYERS SURROUNDING THE MOS FETS
#2 | 2024-10-10THIN-SHEET FINFET DEVICE
#3 | 2024-08-22METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANOTUBES AND A FIELD EFFECT TRANSISTOR
#4 | 2023-11-30METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE
#5 | 2023-10-19Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS
#6 | 2023-06-29Semiconductor device having fin structures with unequal channel heights and manufacturing method thereof
#7 | 2022-11-17Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor
#8 | 2022-11-03Strained Channel Field Effect Transistor
#9 | 2022-08-04Method of manufacturing a semiconductor device and a semiconductor device
#10 | 2021-09-23Method for manufacturing semiconductor device with spacer layer
#11 | 2021-09-16Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS
#12 | 2021-06-24Semiconductor device and manufacturing method thereof
#13 | 2021-06-17Thin-sheet FinFET device
#14 | 2021-02-25Heterogeneous semiconductor device substrates with high quality epitaxy
#15 | 2020-11-12Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor
#16 | 2020-07-09Semiconductor device including fin structure and manufacturing method thereof
#17 | 2020-03-05Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistor
#18 | 2020-03-05Semiconductor device and manufacturing method thereof
#19 | 2020-03-05Semiconductor device and manufacturing method thereof
#20 | 2020-02-20III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof
#21 | 2020-02-06Semiconductor device including FINFETs having different channel heights
#22 | 2020-01-23Semiconductor device and manufacturing method thereof
#23 | 2019-10-31Method of manufacturing a semiconductor device and a semiconductor device
#24 | 2019-10-10Method of fabricating semiconductor device with nanowires
#25 | 2019-08-08III-V semiconductor layers, III-V semiconductor device and methods of manufacturing thereof
#26 | 2019-05-30Semiconductor device and manufacturing method thereof
#27 | 2019-05-30Heterogeneous semiconductor device substrates with high quality epitaxy
#28 | 2019-05-16Complementary MOS FETS vertically arranged and including multiple dielectric layers surrounding the MOS FETS
#29 | 2019-05-16MOSFETs with channels on nothing and methods for forming the same
#30 | 2019-05-02FinFET with two fins on STI
#31 | 2019-05-02Gate all-around semiconductor device including a first nanowire structure and a second nanowire structure
#32 | 2019-05-02Semiconductor device and manufacturing method thereof
#33 | 2019-05-02Semiconductor device and manufacturing method thereof
#34 | 2019-04-30Method of manufacturing a semiconductor device and a semiconductor device
#35 | 2019-03-21Semiconductor device including FinFETS having different channel heights and manufacturing method thereof
#36 | 2019-03-21Method of manufacturing a gate-all-around semiconductor device
#37 | 2019-03-07Elongated semiconductor structure planarization
#38 | 2018-11-08Semiconductor device including an epitaxial layer wrapping around the nanowires
#39 | 2018-11-08Semiconductor device and method of fabricating the same
#40 | 2018-11-01Semiconductor device and manufacturing method thereof
#41 | 2018-11-01Multiple-stacked semiconductor nanowires and source/drain spacers
#42 | 2018-09-27Nanowire FinFET Transistor
#43 | 2018-06-14Process to etch semiconductor materials
#44 | 2018-05-31III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof
#45 | 2018-05-31Gate all-around semiconductor device and manufacturing method thereof
#46 | 2018-05-17Nanowire semiconductor device structure and method of manufacturing
#47 | 2018-04-19III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof
#48 | 2018-01-23III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof
#49 | 2017-12-14Strained channel field effect transistor
#50 | 2017-11-23MOSFETs with channels on nothing and methods for forming the same
#51 | 2017-11-02Thin-sheet FinFET device
#52 | 2017-09-14Nanowire FinFet transistor
#53 | 2017-05-04Elongated semiconductor structure planarization
#54 | 2017-03-09FinFET with two fins on STI
#55 | 2017-02-23Vertical gate-all-around field effect transistors
#56 | 2017-02-02Semiconductor device and formation thereof
#57 | 2017-01-05Nanowire semiconductor device structure and method of manufacturing
#58 | 2016-12-15Carbon layer and method of manufacture
#59 | 2016-10-06Field effect transistors and methods of forming same
#60 | 2016-09-29Faceted finFET
#61 | 2016-09-22Vertical gate-all-around field effect transistors and methods of forming same
#62 | 2016-06-16Nanowire CMOS structure and formation methods
#63 | 2016-05-24Field effect transistors and methods of forming same
#64 | 2016-04-21MOSFETs with channels on nothing and methods for forming the same
#65 | 2015-12-17Thin-sheet FinFET device
#66 | 2015-12-17Carbon layer and method of manufacture
#67 | 2015-05-14Forming fins on the sidewalls of a sacrificial fin to form a FinFET
#68 | 2015-05-07MOSFETs with channels on nothing and methods for forming the same
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