Inventor profile of:

Ho Lee

City:

Gyeonggi-do

Country:

South Korea

Published Applications:

15

Last publication date:

2018-05-10

Top Assignees for applications by Ho Lee

The entities that hold a legal rights for patent applications filed by inventor Lee Ho:

Recent patent applications by Lee Ho

Ho Lee from Gyeonggi-do, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2018-05-10
US20180125044A1
Human necessities

Method for Cultivating a Vegetable worms Having a Function of a Natural Preserved Agent and a Freshness Keeping Agent and an Extract from the Same and a Natural Complex Composition From the Same

#2 | 2017-03-16
US20170071877A1
Human necessities

Pharmaceutical composition for cancer treatment containing gossypol and phenformin as active ingredients

#3 | 2017-01-12
US20170008800A1
Chemistry; metallurgy

Method for treating clay and clay-bearing aggregates and compositions therefor

#4 | 2015-05-14
US20150133584A1
Chemistry; metallurgy

Method For Treating Clay And Clay-Bearing Aggregates And Compositions Therefor

#5 | 2009-08-06
US20090194736A1
Electricity

Nanosized nickel-doped carbon nanotubes for hydrogen storage and production method thereof

#6 | 2008-10-02
US20080242010A1
Electricity

Method of forming an at least penta-sided-channel type of FinFET transistor

#7 | 2007-03-01
US20070048907A1
Electricity

Methods of forming NMOS/PMOS transistors with source/drains including strained materials

#8 | 2006-08-10
US20060175613A1
Electricity

Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device

#9 | 2006-08-01
US10795175
-

Bipolar device and method of manufacturing the same including pre-treatment using germane gas

#10 | 2006-04-27
US20060088968A1
Electricity

Methods of fabricating a semiconductor device using a selective epitaxial growth technique

#11 | 2006-02-23
US20060038200A1
Electricity

Transistors having reinforcement layer patterns and methods of forming the same

#12 | 2006-01-12
US20060008961A1
Electricity

Method of forming MOS transistor having fully silicided metal gate electrode

#13 | 2005-12-22
US20050279997A1
Electricity

Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the same

#14 | 2005-07-21
US20050156202A1
Electricity

At least penta-sided-channel type of FinFET transistor

#15 | 2005-01-13
US20050009265A1
Electricity

Method of fabricating MOS transistor using total gate silicidation process

InventorID:

1161014 ⎘