PATRICK B. SHEA

City:

WASHINGTON, District of Columbia

Country:

United States

Published Applications:

Last publication date:

2017-10-26

Top Assignees for applications by PATRICK B. SHEA

The entities that hold a legal rights for patent applications filed by inventor SHEA PATRICK B.:

PATRICK B. SHEA from WASHINGTON, US has applied for patents for these inventions. The list has both pending applications and granted patents:

BIPOLAR JUNCTION TRANSISTOR DEVICE HAVING BASE EPITAXY REGION ON ETCHED OPENING IN DARC LAYER

Bipolar junction transistor device having base epitaxy region on etched opening in DARC layer

Method of making bipolar junction transistor by forming base epitaxy region on etched opening in DARC layer

Methods of forming superconductor circuits

InventorID:

1190779 ⎘