Inventor profile of:

Qi Wang

City:

Sandy, Utah

Country:

United States

Published Applications:

29

Last publication date:

2015-07-02

Top Assignees for applications by Qi Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Qi:

Recent patent applications by Wang Qi

Qi Wang from Sandy, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-07-02
US20150187873A1
Electricity

Superjunction structures for power devices

#2 | 2012-08-02
US20120196414A1
Electricity

Power MOSFET Having a Strained Channel in a Semiconductor Heterostructure on Metal Substrate

#3 | 2012-04-26
US20120100670A1
Electricity

Wafer level buck converter

#4 | 2012-04-12
US20120086051A1
Electricity

Semiconductor device with (110)-oriented silicon

#5 | 2011-12-08
US20110298047A1
Electricity

Three-dimensional semiconductor device structures and methods

#6 | 2011-09-08
US20110215377A1
Electricity

Structure and method for forming planar gate field effect transistor with low resistance channel region

#7 | 2011-08-18
US20110201179A1
Electricity

Method and structure for dividing a substrate into individual devices

#8 | 2011-01-20
US20110012174A1
Electricity

Structure and method for forming field effect transistor with low resistance channel region

#9 | 2010-10-21
US20100267200A1
Electricity

Semiconductor die packages using thin dies and metal substrates

#10 | 2010-09-30
US20100244127A1
Electricity

BANDGAP ENGINEERED MOS-GATED POWER TRANSISTORS

#11 | 2010-05-06
US20100109129A1
Electricity

Wafer level buck converter

#12 | 2010-04-01
US20100078682A1
Electricity

Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate

#13 | 2010-03-11
US20100059797A1
Electricity

(110)-oriented p-channel trench MOSFET having high-K gate dielectric

#14 | 2009-12-10
US20090302482A1
Electricity

Structure and method for forming hybrid substrate

#15 | 2009-10-29
US20090269896A1
Electricity

Technique for controlling trench profile in semiconductor structures

#16 | 2009-10-15
US20090256196A1
Electricity

Three-dimensional semiconductor device structures and methods

#17 | 2009-10-08
US20090253237A1
Electricity

Scalable power field effect transistor with improved heavy body structure and method of manufacture

#18 | 2009-08-06
US20090194811A1
Electricity

Structure and method for forming field effect transistor with low resistance channel region

#19 | 2009-07-16
US20090181520A1
Electricity

Method and structure for dividing a substrate into individual devices

#20 | 2009-07-16
US20090179259A1
Electricity

Semiconductor device with (110)-oriented silicon

#21 | 2009-03-26
US20090079082A1
Electricity

BONDING PAD STRUCTURE ALLOWING WIRE BONDING OVER AN ACTIVE AREA IN A SEMICONDUCTOR DIE AND METHOD OF MANUFACTURING SAME

#22 | 2008-08-21
US20080197407A1
Electricity

Power Semiconductor Devices with Barrier Layer to Reduce Substrate Up-Diffusion and Methods of Manufacture

#23 | 2008-08-14
US20080191248A1
Electricity

Scalable power field effect transistor with improved heavy body structure and method of manufacture

#24 | 2007-10-11
US20070238263A1
Electricity

Method for bonding a semiconductor substrate to a metal substrate

#25 | 2007-10-11
US20070235886A1
Electricity

Semiconductor die packages using thin dies and metal substrates

#26 | 2007-08-02
US20070176231A1
Electricity

Varying mesa dimensions in high cell density trench MOSFET

#27 | 2006-12-28
US20060289916A1
Electricity

Power trench MOSFETs having SiGe/Si channel structure

#28 | 2006-06-08
US20060118863A1
Electricity

Bandgap engineered MOS-gated power transistors

#29 | 2005-08-04
US20050167742A1
Electricity

Power semiconductor devices and methods of manufacture

InventorID:

1216368 ⎘