Poughkeepsie, New York
United States
10
2019-09-19
The entities that hold a legal rights for patent applications filed by inventor Prindle Christopher M.:
Christopher M. Prindle from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Gate-all-around transistor with spacer support and methods of forming same
#2 | 2019-08-20Gate contact structure positioned above an active region with air gaps positioned adjacent the gate structure
#3 | 2019-08-20Gate and source/drain contact structures positioned above an active region of a transistor device
#4 | 2019-03-14CONTACT TO SOURCE/DRAIN REGIONS AND METHOD OF FORMING SAME
#5 | 2018-10-11Methods of forming epi semiconductor material on a recessed fin in the source/drain regions of a FinFET device
#6 | 2018-04-12Integrated circuit products that include FinFET devices and a protection layer formed on an isolation region
#7 | 2018-01-04Methods of forming a protection layer on an isolation region of IC products comprising FinFET devices
#8 | 2015-11-26RECESSED CHANNEL FIN DEVICE WITH RAISED SOURCE AND DRAIN REGIONS
#9 | 2015-07-02Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
#10 | 2010-03-25SEMICONDUCTOR DEVICE WITH IMPROVED CONTACT PLUGS, AND RELATED FABRICATION METHODS
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