Joetsu
Japan
61
2022-09-01
The entities that hold a legal rights for patent applications filed by inventor WATANABE Satoshi:
Satoshi WATANABE from Joetsu, JP has applied for patents for these inventions. The list has both pending applications and granted patents:
Chemically amplified negative resist composition and resist pattern forming process
#2 | 2022-08-25Chemically amplified positive resist composition and resist pattern forming process
#3 | 2022-04-28Onium salt, chemically amplified resist composition and patterning process
#4 | 2022-04-14Onium salt, chemically amplified negative resist composition, and pattern forming process
#5 | 2021-12-23Onium salt, chemically amplified negative resist composition, and pattern forming process
#6 | 2020-09-24Resist composition and patterning process
#7 | 2020-09-24Resist composition and patterning process
#8 | 2020-09-17Conductive polymer composition, coated product and patterning process
#9 | 2020-09-10Positive resist composition and patterning process
#10 | 2020-09-03Multifunctional polymers
#11 | 2020-07-09Resist composition and patterning process
#12 | 2019-11-28Onium salt, chemically amplified positive resist composition, and resist pattern forming process
#13 | 2019-11-28Chemically amplified negative resist composition and resist pattern forming process
#14 | 2019-11-28Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process
#15 | 2019-08-22Resist composition and patterning process
#16 | 2019-01-10Resist composition and resist patterning process
#17 | 2018-06-28Chemically amplified negative resist composition and resist pattern forming process
#18 | 2018-06-28Chemically amplified positive resist composition and resist pattern forming process
#19 | 2018-02-08Positive resist composition, resist pattern forming process, and photomask blank
#20 | 2018-02-08Negative resist composition and resist pattern forming process
#21 | 2016-11-03Resist composition and patterning process
#22 | 2016-10-13Photomask blank, resist pattern forming process, and method for making photomask
#23 | 2016-10-13Negative resist composition and pattern forming process
#24 | 2016-10-13Chemically amplified negative resist composition using novel onium salt and resist pattern forming process
#25 | 2016-08-25Chemically amplified positive resist composition and pattern forming process
#26 | 2016-06-09Shrink material and pattern forming process
#27 | 2016-06-09Shrink material and pattern forming process
#28 | 2016-03-31Sulfonium salt, resist composition and resist pattern forming process
#29 | 2016-03-10Negative-tone resist compositions and multifunctional polymers therein
#30 | 2015-12-10Chemically amplified resist composition and pattern forming process
#31 | 2015-07-16Chemically amplified negative resist composition and patterning process
#32 | 2015-06-18Sulfonium salt, resist composition and resist pattern forming process
#33 | 2014-11-20Chemically amplified negative resist composition and patterning process
#34 | 2014-11-06Chemically amplified negative resist composition and patterning process
#35 | 2014-02-06Water-dispersible electrically conductive fluorine-containing polyaniline compositions for lithography
#36 | 2013-08-15Chemically amplified negative resist composition and pattern forming process
#37 | 2012-08-30Chemically amplified negative resist composition and patterning process
#38 | 2012-08-30Chemically amplified negative resist composition and patterning process
#39 | 2012-08-02Resist pattern forming process
#40 | 2012-02-02Polymerizable monomers
#41 | 2012-02-02Polymer, chemically amplified negative resist composition, and patterning process
#42 | 2011-12-01Photomask blank, resist pattern forming process, and photomask preparation process
#43 | 2011-09-01Polymer, chemically amplified positive resist composition and pattern forming process
#44 | 2011-09-01Chemically amplified negative resist composition and patterning process
#45 | 2011-08-18Chemically amplified negative resist composition for EB or EUV lithography and patterning process
#46 | 2011-08-18Chemically amplified positive resist composition for EB or EUV lithography and patterning process
#47 | 2011-08-18Chemically amplified positive resist composition and pattern forming process
#48 | 2011-07-14Negative resist composition and patterning process
#49 | 2011-04-14Deprotection method of protected polymer
#50 | 2010-12-16Chemically amplified positive photoresist composition and pattern forming process
#51 | 2010-12-02Chemically amplified resist composition and pattern forming process
#52 | 2010-10-14Patterning process
#53 | 2010-09-30Photomask blank, processing method, and etching method
#54 | 2010-06-10Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process
#55 | 2008-11-06Preparation process of chemically amplified resist composition
#56 | 2008-04-24Resist composition and patterning process
#57 | 2007-12-20Photoacid generators, chemically amplified resist compositions, and patterning process
#58 | 2007-07-12Lactone-containing compound, polymer, resist composition, and patterning process
#59 | 2007-02-15Chemically amplified positive resist composition and patterning process
#60 | 2006-08-24Chemically amplified positive resist composition and patterning process
#61 | 2005-10-20Chemically amplified positive resist composition and patterning process
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