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Inventor profile of:

Jiang Li

City:

Tokyo

Country:

Japan

Published Applications:

6

Last publication date:

2016-08-04

Top Assignees for applications by Jiang Li

The entities that hold a legal rights for patent applications filed by inventor Li Jiang:

  • FURUKAWA ELECTRIC CO., LTD. 4 Tokyo, Japan
  • THE FURUKAWA ELECTRIC CO., LTD. 2 Tokyo, Japan
  • FUJI ELECTRIC CO., LTD. 1 Kawasaki-shi, Japan
  • FUJI ELECTRIC CO., LTD. 1 Kawasaki-shi, Kanagawa, Japan

Recent patent applications by Li Jiang

Jiang Li from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-08-04
US20160225889A1
Electricity

Nitride semiconductor device, production method thereof, diode, and field effect transistor

#2 | 2015-08-06
US20150221725A1
Electricity

Semiconductor multi-layer substrate and semiconductor element

#3 | 2011-08-18
US20110198669A1
Electricity

Transistor and method for fabricating the same

#4 | 2010-09-30
US20100244044A1
Electricity

GaN-BASED FIELD EFFECT TRANSISTOR

#5 | 2009-08-06
US20090194790A1
Electricity

Field effect transistor having semiconductor operating layer formed with an inclined side wall

#6 | 2007-09-13
US20070210335A1
Electricity

GaN semiconductor device having a high withstand voltage

InventorID:

1250967 ⎘

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