Mesa, Arizona
United States
16
2019-09-19
The entities that hold a legal rights for patent applications filed by inventor Walls James:
James Walls from Mesa, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Flash memory cell with dual erase modes for increased cell endurance
#2 | 2019-08-15Floating gate spacer for controlling a source region formation in a memory cell
#3 | 2019-07-04Split-Gate Memory Cell With Field-Enhanced Source Junctions, And Method Of Forming Such Memory Cell
#4 | 2019-07-04Memory cell with asymmetric word line and erase gate for decoupled program erase performance
#5 | 2019-07-04Memory cell with a flat-topped floating gate structure
#6 | 2019-03-28Memory cell with oxide cap and spacer layer for protecting a floating gate from a source implant
#7 | 2018-10-04Resistive Memory Cell With Sloped Bottom Electrode
#8 | 2016-10-27Resistive memory cell having a single bottom electrode and two top electrodes
#9 | 2016-06-30Resistive memory cell having a reduced conductive path area
#10 | 2016-06-30Resistive Memory Cell With Sloped Bottom Electrode
#11 | 2015-08-20Resistive memory cell having a reduced conductive path area
#12 | 2015-08-20Resistive memory cell with sloped bottom electrode
#13 | 2015-08-20Resistive memory cell with bottom electrode having a sloped side wall
#14 | 2015-08-20Resistive memory cell having a reduced conductive path area
#15 | 2014-09-18Resistive memory cell with trench-shaped bottom electrode
#16 | 2014-09-18Resistive memory cell with trench-shaped bottom electrode
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