Allen, Texas
United States
12
2023-07-06
The entities that hold a legal rights for patent applications filed by inventor Cai Jun:
Jun Cai from Allen, US has applied for patents for these inventions. The list has both pending applications and granted patents:
LDMOS TRANSISTOR AND METHOD OF FORMING THE LDMOS TRANSISTOR WITH IMPROVED RDS*CGD
#2 | 2020-12-10Zener-triggered transistor with vertically integrated Zener diode
#3 | 2020-04-30Integrated circuit, LDMOS with bottom gate and ballast drift
#4 | 2020-02-27LDMOS transistor and method of forming the LDMOS transistor with improved Rds*Cgd
#5 | 2020-01-02Transistors having gates with a lift-up region
#6 | 2019-05-23Low substrate leakage Zener diode with modulated buried junction
#7 | 2019-05-02Low substrate leakage zener diode with modulated buried junction
#8 | 2019-04-25Transistors having gates with a lift-up region
#9 | 2019-02-21Integrated circuit, LDMOS with trapezoid JFET, bottom gate and ballast drift and fabrication method
#10 | 2016-12-15LDMOS transistor and method of forming the LDMOS transistor with improved RDS*CGD
#11 | 2016-02-11Methods and apparatus for LDMOS devices with cascaded RESURF implants and double buffers
#12 | 2015-09-10LDMOS transistor and method of forming the LDMOS transistor with improved Rds*Cgd
1285053 ⎘