Inventor profile of:

Scott Allen

City:

Apex, North Carolina

Country:

United States

Published Applications:

17

Last publication date:

2026-05-07

Top Assignees for applications by Scott Allen

The entities that hold a legal rights for patent applications filed by inventor Allen Scott:

Recent patent applications by Allen Scott

Scott Allen from Apex, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-05-07
US20260128740A1
Electricity

GATE DRIVER SYSTEMS AND RELATED METHODS

#2 | 2019-02-28
US20190067468A1
Electricity

Power module for supporting high current densities

#3 | 2018-11-15
US20180331679A1
Electricity

Power module with improved reliability

#4 | 2018-07-19
US20180204945A1
Electricity

Vertical FET structure

#5 | 2018-06-12
US15594868
Electricity

Power module with improved reliability

#6 | 2017-09-14
US20170263713A1
Electricity

Power module having a switch module for supporting high current densities

#7 | 2015-11-19
US20150333191A1
Electricity

Schottky diode

#8 | 2014-05-29
US20140145213A1
Electricity

Schottky diode

#9 | 2013-08-15
US20130207123A1
Electricity

Power module for supporting high current densities

#10 | 2013-03-14
US20130062723A1
Electricity

Schottky diode

#11 | 2013-03-14
US20130062620A1
Electricity

Schottky diode employing recesses for elements of junction barrier array

#12 | 2013-03-14
US20130062619A1
Electricity

Edge termination structure employing recesses for edge termination elements

#13 | 2009-09-10
US20090224289A1
Electricity

Transistors including supported gate electrodes

#14 | 2009-08-27
US20090215280A1
Electricity

Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides

#15 | 2007-07-19
US20070164321A1
Electricity

Methods of fabricating transistors including supported gate electrodes

#16 | 2007-01-04
US20070001174A1
Electricity

Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides

#17 | 2006-05-04
US20060091430A1
Electricity

Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same

InventorID:

134605 ⎘