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Inventor profile of:

Ashutosh MISRA

City:

Plano, Texas

Country:

United States

Published Applications:

Last publication date:

2015-11-12

Top Assignees for applications by Ashutosh MISRA

The entities that hold a legal rights for patent applications filed by inventor MISRA Ashutosh:

AIR LIQUIDE ELECTRONICS US LP 8 Houston, TX United States
Air Liquide Electronics U.S. LP 5 Dallas, TX United States
Air Liquide America L.P. 5 Houston, TX United States
L'Air Liquide, Société Anonyme á Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procédés Georges Claude 1 Paris, France
Zhiwen Wan 1 Plano, TX United States
American Air Liquide, Inc. 1 Fremont, CA United States
L'Air Liquide Societe Anonyme Pour L'Etude Et L'Exploitation Des Procedes Georges Claude 1 Paris, France
Ashutosh Misra 1 Plano, TX United States

Recent patent applications by MISRA Ashutosh

Ashutosh MISRA from Plano, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-11-12

US20150325097A1

Physics

SMART CANISTER

#2 | 2015-07-07

US13458579

Chemistry; metallurgy

Synthesis method for carbosilanes

#3 | 2012-09-13

US20120231180A1

Performing operations; transporting

PROCESS OF PURIFYING RUTHENIUM PRECURSORS

#4 | 2011-07-14

US20110171836A1

Chemistry; metallurgy

Methods for forming a ruthenium-based film on a substrate

#5 | 2011-07-14

US20110171381A1

Chemistry; metallurgy

Silicon precursors and method for low temperature CVD of silicon-containing films

#6 | 2010-07-29

US20100189898A1

Chemistry; metallurgy

MANUFACTURING OF ADDUCT FREE ALKALINE-EARTH METAL Cp COMPLEXES

#7 | 2010-05-13

US20100116738A1

Performing operations; transporting

Process Of Purifying Ruthenium Precursors

#8 | 2009-01-22

US20090020140A1

Chemistry; metallurgy

NON-FLAMMABLE SOLVENTS FOR SEMICONDUCTOR APPLICATIONS

#9 | 2008-09-04

US20080214003A1

Chemistry; metallurgy

Methods for forming a ruthenium-based film on a substrate

#10 | 2008-05-29

US20080125341A1

Chemistry; metallurgy

IMPROVED ACIDIC CHEMISTRY FOR POST-CMP CLEANING

#11 | 2008-04-03

US20080081106A1

Chemistry; metallurgy

Silicon precursors and method for low temperature CVD of silicon-containing films

#12 | 2008-02-28

US20080047592A1

Electricity

Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide

#13 | 2007-10-04

US20070232511A1

Chemistry; metallurgy

Cleaning solutions including preservative compounds for post CMP cleaning processes

#14 | 2007-08-16

US20070190807A1

Chemistry; metallurgy

Method for forming dielectric or metallic films

#15 | 2007-06-14

US20070131252A1

Chemistry; metallurgy

Alkylsilanes as solvents for low vapor pressure precursors

#16 | 2007-03-22

US20070062270A1

Physics

Chemical storage device with integrated load cell

#17 | 2006-10-19

US20060234888A1

Chemistry; metallurgy

Acidic chemistry for Post-CMP cleaning using a composition comprising mercaptopropionic acid

#18 | 2006-04-20

US20060084281A1

Chemistry; metallurgy

Novel deposition of high-k MSiON dielectric films

#19 | 2006-03-09

US20060051975A1

Chemistry; metallurgy

Novel deposition of SiON dielectric films

#20 | 2005-09-13

US10853497

Methods and systems for controlling the concentration of a component in a composition with absorption spectroscopy

#21 | 2005-09-08

US20050197266A1

Chemistry; metallurgy

Acidic chemistry for post-CMP cleaning

#22 | 2005-09-08

US20050196970A1

Chemistry; metallurgy

Method for novel deposition of high-k MSiON dielectric films

#23 | 2005-08-18

US20050181961A1

Chemistry; metallurgy

Alkaline chemistry for post-CMP cleaning

InventorID:

1356095 ⎘