Poughkeepsie, New York
United States
8
2020-06-30
The entities that hold a legal rights for patent applications filed by inventor Prindle Christopher:
Christopher Prindle from Poughkeepsie, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Removal of epitaxy defects in transistors
#2 | 2017-10-31FinFET spacer formation on gate sidewalls, between the channel and source/drain regions
#3 | 2017-06-20Devices and methods of forming epi for aggressive gate pitch
#4 | 2016-02-25RAISED SOURCE/DRAIN EPI WITH SUPPRESSED LATERAL EPI OVERGROWTH
#5 | 2015-11-26Raised source/drain EPI with suppressed lateral EPI overgrowth
#6 | 2015-11-19Semiconductor devices with dummy gate structures partially on isolation regions
#7 | 2015-09-29Methods of forming replacement spacer structures on semiconductor devices
#8 | 2009-10-01Two step optical planarizing layer etch
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