Inventor profile of:

Ishiang Shih

City:

Brossard

Country:

Canada

Published Applications:

30

Last publication date:

2020-03-05

Recent patent applications by Shih Ishiang

Ishiang Shih from Brossard, CA has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2020-03-05
US20200075778A1
Electricity

High electron mobility thin film transistors

#2 | 2020-01-30
US20200036364A1
Electricity

Tunable surface acoustic wave resonators and SAW filters with digital to analog converters

#3 | 2019-12-26
US20190393860A1
Electricity

Tunable film bulk acoustic resonators and FBAR filters with digital to analog converters

#4 | 2018-03-08
US20180069528A1
Electricity

Tunable film bulk acoustic resonators and filters with integrated biasing resistors

#5 | 2017-12-21
US20170366165A1
Electricity

Tunable surface acoustic wave resonators and filters

#6 | 2017-03-23
US20170085246A1
Electricity

Tunable surface acoustic wave resonators and filters

#7 | 2017-01-26
US20170025596A1
Electricity

Tunable film bulk acoustic resonators and filters

#8 | 2016-10-20
US20160308067A1
Electricity

Metal oxynitride transistor devices

#9 | 2016-09-13
US14545516
Electricity

Process for forming gate of thin film transistor devices

#10 | 2016-08-04
US20160225915A1
Electricity

Metal oxynitride transistor devices

#11 | 2016-05-05
US20160126355A1
Electricity

Thin film transistors with metal oxynitride active channels for electronic displays

#12 | 2016-04-26
US14544752
Electricity

Metal oxynitride diode devices

#13 | 2016-04-07
US20160099684A1
Electricity

Integrated power device with a metal oxynitride active channel for power switching and microwave amplification

#14 | 2016-01-07
US20160005771A1
Electricity

Millimetre wave integrated circuits with thin film transistors

#15 | 2015-12-24
US20150372096A1
Electricity

High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications

#16 | 2015-12-03
US20150344353A1
Chemistry; metallurgy

Electron sensitive glass and optical circuits, microstructures formed therein

#17 | 2015-09-17
US20150263116A1
Electricity

High electron mobility transistors with improved gates and reduced surface traps

#18 | 2015-04-16
US20150102387A1
Electricity

High electron mobility transistors with minimized performance effects of microcracks in the channel layers

#19 | 2015-03-12
US20150069514A1
Electricity

Millimetre wave integrated circuits with thin film transistors

#20 | 2014-11-13
US20140332854A1
Electricity

Stress release structures for metal electrodes of semiconductor devices

#21 | 2013-03-14
US20130065383A1
Electricity

Fabrication methods for T-gate and inverted L-gate structure for high frequency devices and circuits

#22 | 2012-12-04
US13200614
-

Fabrication methods for HEMT devices and circuits on compound semiconductor materials

#23 | 2011-12-01
US20110291159A1
Electricity

Stress release structures for metal electrodes of semiconductor devices

#24 | 2011-07-28
US20110180850A1
Electricity

Configuration and manufacturing method of low-resistance gate structures for semiconductor devices and circuits

#25 | 2010-12-02
US20100301343A1
Electricity

Thin film transistors and circuits with metal oxynitride active channel layers

#26 | 2010-12-02
US20100301340A1
Electricity

Thin film transistors and arrays with controllable threshold voltages and off state leakage current

#27 | 2008-02-21
US20080041436A1
Electricity

Bifacial photovoltaic devices

#28 | 2006-02-16
US20060033098A1
Electricity

Organic semiconductor devices having low contact resistance

#29 | 2005-12-15
US20050275038A1
Electricity

Indium oxide-based thin film transistors and circuits

#30 | 2005-03-03
US20050046523A1
Electricity

Tunable photonic band gap structures for microwave signals

InventorID:

139991 ⎘