AUSTIN, Texas
United States
45
2026-04-30
The entities that hold a legal rights for patent applications filed by inventor SADD MICHAEL A.:
MICHAEL A. SADD from AUSTIN, US has applied for patents for these inventions. The list has both pending applications and granted patents:
CONFIGURATION BIT HAVING A PLURALITY OF MAGNETORESISTIVE DEVICES, AND METHODS OF PROGRAMMING AND READING THE SAME
#2 | 2025-11-20ARRAY ARCHITECTURE FOR DISTRIBUTED MRAM
#3 | 2025-10-23SENSING STANDALONE MTJ WITHOUT BIAS
#4 | 2025-09-18MTJ ANTIFUSE WITH TRIM ENABLE AND METHOD OF OPERATION
#5 | 2025-09-18MAGNETIC TUNNEL JUNCTION ANTI-FUSE INCLUDING NON-MAGNETIC STACK
#6 | 2025-09-18REFERENCE RESISTOR HAVING VARIABLE RESISTANCE
#7 | 2025-09-18ANTI-FUSE AND FUSE IN MAGNETORESISTIVE DEVICE
#8 | 2024-12-19DISTRIBUTED MRAM CONFIGURATION BIT AND METHOD OF REPAIR
#9 | 2023-11-16Testing disruptive memories
#10 | 2022-07-28Memory with sense amplifiers
#11 | 2019-03-05Memory with a global reference circuit
#12 | 2018-01-18Systems and methods for non-volatile flip flops
#13 | 2017-12-19Resistive non-volatile memory and a method for sensing a memory cell in a resistive non-volatile memory
#14 | 2017-11-30Systems and methods for non-volatile flip flops
#15 | 2017-11-23Sense path circuitry suitable for magnetic tunnel junction memories
#16 | 2017-10-03Magnetic random access memory (MRAM) and method of operation
#17 | 2017-08-22Sense amplifier circuit
#18 | 2017-08-22Sense amplifier circuit
#19 | 2017-05-02Nonvolatile static random access memory (NVSRAM) system having a static random access memory (SRAM) array and a resistive memory array
#20 | 2017-04-27Sense path circuitry suitable for magnetic tunnel junction memories
#21 | 2017-03-14Non-volatile random access memory (NVRAM) with backup control
#22 | 2017-03-02Programmable resistive elements as variable tuning elements
#23 | 2017-03-02Ternary content addressable memory (TCAM) with programmable resistive elements
#24 | 2017-03-02Static random access memory (SRAM) with programmable resistive elements
#25 | 2017-02-16Non-volatile dynamic random access memory (NVDRAM) with programming line
#26 | 2016-12-13Magnetic random access memory (MRAM) and method of operation
#27 | 2016-12-06Resistive non-volatile memory cell and method for programming same
#28 | 2016-12-06Programmable resistive elements as variable tuning elements
#29 | 2016-11-24Systems and methods for SRAM with backup non-volatile memory that includes MTJ resistive elements
#30 | 2016-08-25Memory device with combined non-volatile memory (NVM) and volatile memory
#31 | 2016-05-26Resistive memory with program verify and erase verify capability
#32 | 2016-01-21Memory device with combined non-volatile memory (NVM) and volatile memory
#33 | 2012-09-27Low-leakage, high-capacitance capacitor structures and method of making
#34 | 2012-05-10Method for programming a multi-state non-volatile memory (NVM)
#35 | 2012-01-19Soft program of a non-volatile memory block
#36 | 2009-02-12Split gate memory cell and method therefor
#37 | 2007-08-02Double-gated non-volatile memory and methods for forming thereof
#38 | 2007-06-14Back-gated semiconductor device with a storage layer and methods for forming thereof
#39 | 2007-06-14Floating gate non-volatile memory and method thereof
#40 | 2007-04-19Voltage controlled oscillator with a multiple gate transistor and method therefor
#41 | 2007-04-05Split gate memory cell and method therefor
#42 | 2007-01-25Process for forming an electronic device including discontinuous storage elements
#43 | 2007-01-25Electronic device including discontinuous storage elements
#44 | 2006-02-09Method of discharging a semiconductor device
#45 | 2005-01-25Memory with multiple state cells and sensing method
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