Chapel Hill, North Carolina
United States
33
2013-03-21
The entities that hold a legal rights for patent applications filed by inventor Bergmann Michael John:
Michael John Bergmann from Chapel Hill, US has applied for patents for these inventions. The list has both pending applications and granted patents:
High efficacy semiconductor light emitting devices employing remote phosphor configurations
#2 | 2012-08-30Solid state light emitting devices including nonhomogeneous luminophoric particle size layers
#3 | 2012-08-23Low temperature high strength metal stack for die attachment
#4 | 2012-08-02Horizontal light emitting diodes including phosphor particles
#5 | 2012-07-26Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
#6 | 2012-06-21Methods of forming light emitting devices having current reducing structures
#7 | 2012-04-05Light emitting devices having roughened/reflective contacts and methods of fabricating same
#8 | 2012-01-26Group III nitride based quantum well light emitting device structures with an indium containing capping structure
#9 | 2011-08-04Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
#10 | 2011-04-14Multi-rotation epitaxial growth apparatus and reactors incorporating same
#11 | 2011-02-10Light emitting diodes including integrated backside reflector and die attach
#12 | 2011-01-13Methods of forming light emitting devices having current reducing structures
#13 | 2010-12-16Indium gallium nitride-based Ohmic contact layers for gallium nitride-based devices
#14 | 2010-12-16Front end scribing of light emitting diode (LED) wafers and resulting devices
#15 | 2010-06-03Group III nitride based quantum well light emitting device structures with an indium containing capping structure
#16 | 2010-04-29Restricted radiated heating assembly for high temperature processing
#17 | 2009-10-22Emission tuning methods and devices fabricated utilizing methods
#18 | 2009-10-08Light emitting devices having roughened/reflective contacts and methods of fabricating same
#19 | 2009-10-01Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
#20 | 2009-01-29Methods of forming light emitting devices with active layers that extend into opened pits
#21 | 2008-09-11Light emitting devices having a roughened reflective bond pad and methods of fabricating light emitting devices having roughened reflective bond pads
#22 | 2008-09-11Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
#23 | 2008-06-19Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
#24 | 2008-05-29Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
#25 | 2007-09-13Light emitting diode with metal coupling structure
#26 | 2007-06-28LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES
#27 | 2007-05-24Light emitting diode with degenerate coupling structure
#28 | 2006-11-30Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
#29 | 2006-11-02Light emitting devices with active layers that extend into opened pits
#30 | 2006-06-22Restricted radiated heating assembly for high temperature processing
#31 | 2006-02-02Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
#32 | 2006-01-05Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
#33 | 2005-03-17Group III nitride based quantum well light emitting device structures with an indium containing capping structure
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