Inventor profile of:

Su WANG

City:

Shanghai

Country:

China

Published Applications:

14

Last publication date:

2025-07-17

Top Assignees for applications by Su WANG

The entities that hold a legal rights for patent applications filed by inventor WANG Su:

Recent patent applications by WANG Su

Su WANG from Shanghai, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-07-17
US20250232026A1
Physics

PROCESSING METHOD OF REMOTE ATTESTATION REPORT, DATABASE SERVICE END AND DATABASE CLIENT END

#2 | 2025-06-26
US20250208894A1
Physics

DATA PROCESSING METHOD, APPARATUS, DEVICE AND STORAGE MEDIUM

#3 | 2025-06-12
US20250190542A1
Physics

VIRTUALIZATION-BASED TRUSTED COMPUTING MEASUREMENT METHOD AND APPARATUS, DEVICE, AND STORAGE MEDIUM

#4 | 2025-01-16
US20250021002A1
Physics

BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF

#5 | 2025-01-09
US20250013149A1
Physics

ADDITIVE FOR 193 NM DRY PHOTORESIST AND PREPARATION METHOD FOR AND APPLICATION OF ADDITIVE

#6 | 2024-10-24
US20240351979A1
Chemistry; metallurgy

POLYONIUM SALT PHOTOACID GENERATOR FOR ARF LIGHT SOURCE DRY LITHOGRAPHY, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF

#7 | 2024-09-12
US20240302749A1
Physics

RESIN, AND ARF DRY PHOTORESIST COMPOSITION COMPRISING SAME AND APPLICATION

#8 | 2024-07-25
US20240248401A1
Physics

RESIN AND 193 NM DRY PHOTORESIST CONTAINING SAME, AND PREPARATION METHOD THEREFOR AND USE THEREOF

#9 | 2024-03-21
US20240095928A1
Physics

Model Training Method, Image Edge Detection Method, and Multi-Sensor Calibration Method

#10 | 2021-05-06
US20210130750A1
Chemistry; metallurgy

Cleaning agent and preparation method and use thereof

#11 | 2019-12-05
US20190367522A1
Chemistry; metallurgy

Leveling agent, metal plating composition containing same, preparation method therefor and use thereof

#12 | 2016-06-30
US20160190007A1
Electricity

A METHOD FOR MICROVIA FILLING BY COPPER ELECTROPLATING WITH TSV TECHNOLOGY FOR 3D COPPER INTERCONNECTION AT HIGH ASPECT RATIO

#13 | 2016-06-16
US20160168738A1
Chemistry; metallurgy

Additive for reducing voids after annealing of copper plating with through silicon via

#14 | 2016-06-16
US20160168737A1
Chemistry; metallurgy

Additive C capable of changing microvia-filling method by TSV copper plating, and electroplating solution containing same

InventorID:

1561698 ⎘