Inventor profile of:

Sungsoo YI

City:

Sunnyvale, California

Country:

United States

Published Applications:

48

Last publication date:

2025-08-07

Top Assignees for applications by Sungsoo YI

The entities that hold a legal rights for patent applications filed by inventor YI Sungsoo:

Recent patent applications by YI Sungsoo

Sungsoo YI from Sunnyvale, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-08-07
US20250255065A1
Electricity

UNIT SUB-PIXEL STRUCTURE OF MICRO-LED AND METHOD OF MANUFACTURING THE SAME

#2 | 2025-03-20
US20250098367A1
Electricity

RED LIGHT-EMITTING DIODE

#3 | 2024-12-05
US20240405162A1
Electricity

RGB MICRO-LIGHT-EMITTING DIODE HAVING VERTICALLY-STACKED STRUCTURE WITH CORNER MESA CONTACT STRUCTURES AND MANUFACTURING METHOD THEREOF

#4 | 2024-12-05
US20240405056A1
Electricity

VERTICALLY-STACKED RGB MICRO-LIGHT-EMITTING DIODE HAVING CORNER MESA CONTACT STRUCTURES AND MANUFACTURING METHOD THEREOF

#5 | 2023-12-28
US20230420623A1
Electricity

PIXEL OF MICRODISPLAY HAVING INTEGRATED CATADIOPTRIC LIGHT EXTRACTION SYSTEM

#6 | 2023-07-27
US20230238481A1
Electricity

Unit pixel for red-green-cyan-blue (RGCB) micro-display having vertically stacked sub-pixels

#7 | 2023-07-27
US20230238420A1
Electricity

Pixel for micro-display having vertically stacked sub-pixels

#8 | 2022-10-13
US20220328721A1
Electricity

LIGHT EMITTING DEVICES AND ARRAYS WITH POCKETS

#9 | 2022-10-06
US20220320373A1
Electricity

LIGHT EMITTING DEVICES AND ARRAYS WITH SEMI-CONDUCTOR LAYER POCKETS

#10 | 2022-10-06
US20220320372A1
Electricity

LIGHT EMITTING DEVICES AND ARRAYS WITH N-LAYER POCKETS

#11 | 2022-02-24
US20220059612A1
Electricity

Micro light emitting devices

#12 | 2021-10-28
US20210336083A1
Electricity

Pixel of micro display having inclined side

#13 | 2021-06-17
US20210184076A1
Electricity

Pixel of micro display having vertically stacked sub-pixels and common electrode

#14 | 2021-04-15
US20210111306A1
Electricity

Pixel for micro display and method of manufacturing the same

#15 | 2021-01-21
US20210020806A1
Electricity

Micro light emitting devices

#16 | 2021-01-21
US20210020687A1
Electricity

Micro light emitting devices

#17 | 2020-04-02
US20200105972A1
Electricity

Micrometer scale light emitting diode displays on patterned templates and substrates

#18 | 2020-04-02
US20200105969A1
Electricity

Micro light emitting devices

#19 | 2020-04-02
US20200105824A1
Electricity

Micrometer scale light emitting diode displays on patterned templates and substrates

#20 | 2018-06-21
US20180175236A1
Electricity

Semiconductor light emitting device growing active layer on textured surface

#21 | 2017-11-30
US20170345969A1
Electricity

III-nitride nanowire LED with strain modified surface active region and method of making thereof

#22 | 2017-06-15
US20170170261A1
Electricity

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FOR MANUFACTURING THE SAME

#23 | 2016-09-08
US20160260866A1
Electricity

III-nitride nanowire LED with strain modified surface active region and method of making thereof

#24 | 2015-08-06
US20150221821A1
Electricity

Coalesced nanowire structures with interstitial voids and method for manufacturing the same

#25 | 2015-07-23
US20150207028A1
Electricity

III-nitride nanowire LED with strain modified surface active region and method of making thereof

#26 | 2014-05-15
US20140134769A1
Electricity

Nanostructure optoelectronic device with independently controllable junctions

#27 | 2013-03-28
US20130075693A1
Electricity

Coalesced nanowire structures with interstitial voids and method for manufacturing the same

#28 | 2012-08-16
US20120205691A1
Electricity

Controlling pit formation in a III-nitride device

#29 | 2012-02-02
US20120025169A1
Electricity

NANOSTRUCTURE ARRAY TRANSISTOR

#30 | 2011-12-08
US20110299074A1
Electricity

Nanostructure optoelectronic device with independently controllable junctions

#31 | 2011-12-08
US20110297913A1
Electricity

Nanostructure optoelectronic device having sidewall electrical contact

#32 | 2011-12-08
US20110297214A1
Electricity

Multi-junction solar cell having sidewall bi-layer electrical interconnect

#33 | 2011-07-21
US20110177631A1
Electricity

Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate

#34 | 2010-12-30
US20100327256A1
Electricity

Controlling pit formation in a III-nitride device

#35 | 2010-10-21
US20100264454A1
Electricity

Semiconductor light emitting device growing active layer on textured surface

#36 | 2010-09-23
US20100236617A1
Electricity

Stacked Structure Solar Cell Having Backside Conductive Contacts

#37 | 2010-02-25
US20100047957A1
Electricity

METHOD FOR FORMING SOLAR CELL HAVING ACTIVE REGION WITH NANOSTRUCTURES HAVING ENERGY WELLS

#38 | 2008-07-03
US20080156366A1
Electricity

Solar cell having active region with nanostructures having energy wells

#39 | 2008-06-26
US20080149946A1
Electricity

Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light

#40 | 2008-06-26
US20080149942A1
Electricity

III-nitride light emitting device with reduced strain light emitting layer

#41 | 2007-08-16
US20070186629A1
Physics

Functionalizable nanowire-based AFM probe

#42 | 2007-08-16
US20070186628A1
Physics

Method for performing a measurement inside a specimen using an insertable nanoscale FET probe

#43 | 2007-08-16
US20070186627A1
Physics

High aspect ratio AFM probe and method of making

#44 | 2007-07-05
US20070155184A1
Performing operations; transporting

Method for producing a nanostructure such as a nanoscale cantilever

#45 | 2007-05-24
US20070114387A1
Electricity

Matrix assisted laser desorption ionization (MALDI) support structures and methods of making MALDI support structures

#46 | 2007-02-15
US20070037365A1
Chemistry; metallurgy

Semiconductor nanostructures and fabricating the same

#47 | 2006-10-05
US20060225162A1
Chemistry; metallurgy

Method of making a substrate structure with enhanced surface area

#48 | 2006-04-20
US20060084570A1
Performing operations; transporting

System and method for growing nanostructures from a periphery of a catalyst layer

InventorID:

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