Andrew Clark

LAYERED STRUCTURE

POROUS RF SWITCH FOR REDUCED CROSSTALK

A PNICTIDE NANOCOMPOSITE STRUCTURE FOR LATTICE STABILIZATION

Localized strain fields in epitaxial layer over cREO

STRAIN-BALANCED SEMICONDUCTOR STRUCTURE

Semiconductor material having tunable permittivity and tunable thermal conductivity

Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor

INTEGRATED EPITAXIAL METAL ELECTRODES FOR MODIFIED DEVICES

Pnictide nanocomposite structure for lattice stabilization

Epitaxial metal oxide as buffer for epitaxial III-V layers

III-N to rare earth transition in a semiconductor structure

Epitaxial AIN/cREO structure for RF filter applications

Re-based integrated photonic and electronic layered structures

Porous distributed Bragg reflectors for laser applications

Integrated epitaxial metal electrodes

Strain-balanced semiconductor structure

Pnictide buffer structures and devices for GaN base applications

GROUP III SEMICONDUCTOR EPITAXY FORMED ON SILICON VIA SINGLE CRYSTAL REN AND REO BUFFER LAYERS

Integrated epitaxial metal electrodes

Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride

Metal electrode with tunable work functions

Integrated epitaxial metal electrodes

RARE EARTH INTERLAYS FOR MECHANICALLY LAYERING DISSIMILAR SEMICONDUCTOR WAFERS

Rare earth pnictides for strain management

Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride

III-N semiconductor layer on Si substrate

Stress mitigating amorphous SiOinterlayer