Inventor profile of:

John E. Epler

City:

San Jose, California

Country:

United States

Published Applications:

30

Last publication date:

2019-04-04

Top Assignees for applications by John E. Epler

The entities that hold a legal rights for patent applications filed by inventor Epler John E.:

Recent patent applications by Epler John E.

John E. Epler from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2019-04-04
US20190103511A1
Electricity

Light emitting device including porous semiconductor

#2 | 2016-09-29
US20160284935A1
Electricity

III-nitride light emitting device including porous semiconductor

#3 | 2012-09-20
US20120238041A1
Electricity

Color control by alteration of wavelenght converting element

#4 | 2012-09-06
US20120225505A1
Electricity

Method of bonding a semiconductor device using a compliant bonding structure

#5 | 2012-08-30
US20120217533A1
Electricity

Semiconductor light emitting device with a contact formed on a textured surface

#6 | 2012-08-09
US20120199863A1
Electricity

Contact for a semiconductor light emitting device

#7 | 2012-07-26
US20120187372A1
Electricity

Contact for a semiconductor light emitting device

#8 | 2012-03-29
US20120074457A1
Electricity

Semiconductor light emitting device with a contact formed on a textured surface

#9 | 2012-02-23
US20120045858A1
Electricity

Contact for a semiconductor light emitting device

#10 | 2012-02-02
US20120025231A1
Electricity

Series connected flip chip LEDs with growth substrate removed

#11 | 2011-08-11
US20110193059A1
Electricity

III-nitride light emitting device including porous semiconductor

#12 | 2011-06-09
US20110132521A1
Electricity

Color control by alteration of wavelength converting element

#13 | 2011-05-26
US20110121332A1
Electricity

III-V light emitting device with thin n-type region

#14 | 2011-05-19
US20110114987A1
Electricity

Compliant bonding structures for semiconductor devices

#15 | 2011-01-27
US20110018015A1
Electricity

Contact for a semiconductor light emitting device

#16 | 2011-01-27
US20110018013A1
Electricity

THIN-FILM FLIP-CHIP SERIES CONNECTED LEDS

#17 | 2010-12-30
US20100327300A1
Electricity

CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE

#18 | 2010-12-23
US20100320489A1
Electricity

Semiconductor light emitting device with a contact formed on a textured surface

#19 | 2010-09-09
US20100227421A1
Electricity

Method of bonding a semiconductor device using a compliant bonding structure

#20 | 2010-09-09
US20100226404A1
Electricity

SEMICONDUCTOR LIGHT EMITTING DEVICES INCLUDING IN-PLANE LIGHT EMITTING LAYERS

#21 | 2010-09-09
US20100224902A1
Electricity

Complaint bonding structures for semiconductor devices

#22 | 2010-05-06
US20100109030A1
Electricity

Series connected flip chip LEDs with growth substrate removed

#23 | 2010-02-18
US20100041170A1
Electricity

Package-integrated thin film LED

#24 | 2010-02-04
US20100029023A1
Electricity

Controlling edge emission in package-free LED die

#25 | 2009-07-09
US20090173956A1
Electricity

CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE

#26 | 2009-06-04
US20090140274A1
Electricity

III-nitride light emitting device including porous semiconductor layer

#27 | 2009-03-19
US20090072263A1
Electricity

Color control by alteration of wavelength converting element

#28 | 2009-02-19
US20090045427A1
Electricity

Photonic crystal light emitting device

#29 | 2008-12-25
US20080315228A1
Electricity

Low profile side emitting LED with window layer and phosphor layer

#30 | 2006-12-14
US20060281203A1
Electricity

Method of removing the growth substrate of a semiconductor light emitting device

InventorID:

1666331 ⎘