Chando Park

MAGNETO-IMPEDANCE (MI) SENSORS EMPLOYING CURRENT CONFINEMENT AND EXCHANGE BIAS LAYER(S) FOR INCREASED SENSITIVITY

Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory

Message-based key generation using physical unclonable function (PUF)

High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array

Reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices, including magnetic random access memory (MRAM) devices

Physically unclonable function based on comparison of MTJ resistances

System and method to generate a random number

Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICES PARTICULARLY SUITED FOR EFFICIENT SPIN-TORQUE-TRANSFER (STT) MAGNETIC RANDOM ACCESS MEMORY (MRAM) (STT MRAM)

Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer

Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements

Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance

Magnetic etch-stop layer for magnetoresistive read heads