Inventor profile of:

James S. DUNN

City:

Jericho, Vermont

Country:

United States

Published Applications:

42

Last publication date:

2016-03-10

Top Assignees for applications by James S. DUNN

The entities that hold a legal rights for patent applications filed by inventor DUNN James S.:

Recent patent applications by DUNN James S.

James S. DUNN from Jericho, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2016-03-10
US20160071796A1
Electricity

Dielectric region in a bulk silicon substrate providing a high-Q passive resonator

#2 | 2015-12-17
US20150364492A1
Electricity

Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming

#3 | 2015-12-10
US20150357295A1
Electricity

Dielectric region in a bulk silicon substrate providing a high-Q passive resonator

#4 | 2015-10-22
US20150303275A1
Electricity

Base profile of self-aligned bipolar transistors for power amplifier applications

#5 | 2015-09-10
US20150255528A1
Electricity

Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator

#6 | 2015-07-23
US20150206961A1
Electricity

Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures

#7 | 2015-07-09
US20150194416A1
Electricity

Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming

#8 | 2015-04-23
US20150108548A1
Electricity

Base profile of self-aligned bipolar transistors for power amplifier applications

#9 | 2015-02-19
US20150048478A1
Electricity

Trench isolation for bipolar junction transistors in BiCMOS technology

#10 | 2014-08-07
US20140217551A1
Electricity

Trench isolation for bipolar junction transistors in BiCMOS technology

#11 | 2014-07-31
US20140213036A1
Electricity

Forming structures on resistive substrates

#12 | 2014-07-31
US20140209908A1
Electricity

Flattened substrate surface for substrate bonding

#13 | 2014-06-05
US20140151851A1
Electricity

Tapered via and MIM capacitor

#14 | 2014-03-06
US20140061727A1
Electricity

Integrated circuit structure having air-gap trench isolation and related design structure

#15 | 2013-10-03
US20130256758A1
Electricity

Integrated circuit structure having air-gap trench isolation and related design structure

#16 | 2013-08-22
US20130214384A1
Electricity

Low harmonic RF switch in SOI

#17 | 2013-06-06
US20130140668A1
Electricity

Forming structures on resistive substrates

#18 | 2013-05-02
US20130105981A1
Electricity

Flattened substrate surface for substrate bonding

#19 | 2013-04-04
US20130081240A1
Electricity

Method of manufacturing complimentary metal-insulator-metal (MIM) capacitors

#20 | 2012-11-01
US20120275080A1
Electricity

Tapered via and MIM capacitor

#21 | 2012-10-18
US20120261719A1
Electricity

Heterojunction bipolar transistors and methods of manufacture

#22 | 2012-07-26
US20120190190A1
Electricity

Heterojunction bipolar transistors and methods of manufacture

#23 | 2012-07-26
US20120187536A1
Electricity

Complimentary metal-insulator-metal (MIM) capacitors and method of manufacture

#24 | 2012-02-16
US20120038024A1
Electricity

Low harmonic RF switch in SOI

#25 | 2011-02-17
US20110037096A1
Electricity

Heterojunction bipolar transistors and methods of manufacture

#26 | 2011-02-10
US20110032660A1
Electricity

Method of manufacturing complimentary metal-insulator-metal (MIM) capacitors

#27 | 2011-02-10
US20110032659A1
Electricity

Complimentary metal-insulator-metal (MIM) capacitors and method of manufacture

#28 | 2009-01-01
US20090007051A1
Physics

Selectable device options for characterizing semiconductor devices

#29 | 2008-01-17
US20080014705A1
Electricity

Structure and method for performance improvement in vertical bipolar transistors

#30 | 2007-11-15
US20070264787A1
Electricity

Method to build self-aligned NPN in advanced BiCMOS technology

#31 | 2007-08-30
US20070200201A1
Electricity

Structure for performance improvement in vertical bipolar transistors

#32 | 2006-11-09
US20060249813A1
Electricity

Structure and method for performance improvement in vertical bipolar transistors

#33 | 2006-07-20
US20060157824A1
Electricity

Semiconductor device and method having multiple subcollectors formed on a common wafer

#34 | 2006-06-20
US9991142
-

Semiconductor device and method having multiple subcollectors formed on a common wafer

#35 | 2006-04-20
US20060081934A1
Electricity

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

#36 | 2006-03-23
US20060060886A1
Electricity

Method to build self-aligned NPN in advanced BiCMOS technology

#37 | 2005-11-03
US20050245038A1
Electricity

Varactors for CMOS and BiCMOS technologies

#38 | 2005-06-14
US10856503
-

Method to fabricate high-performance NPN transistors in a BiCMOS process

#39 | 2005-05-31
US10865138
-

Diffused extrinsic base and method for fabrication

#40 | 2005-05-10
US10323022
-

Varactors for CMOS and BiCMOS technologies

#41 | 2005-03-22
US10064476
-

Diffused extrinsic base and method for fabrication

#42 | 2005-03-03
US20050048735A1
Electricity

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

InventorID:

170999 ⎘