William E. Hoke

Group III-nitride structure having successively reduced crystallographic dislocation density regions

Doped barrier layers in epitaxial group III nitrides

METHOD FOR REDUCING GROWTH OF NON-UNIFORMITIES AND AUTODOPING DURING COLUMN III-V GROWTH INTO DIELECTRIC WINDOWS

Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices

POLARIZATION EFFECT CARRIER GENERATING DEVICE STRUCTURES HAVING COMPENSATION DOPING TO REDUCE LEAKAGE CURRENT

Gallium nitride devices having low ohmic contact resistance

SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFACIAL CHARGE FOR COLUMN III-V MATERIALS ON COLUMN IV OR COLUMN IV-IV MATERIALS

Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductor

OPTICALLY TRANSPARENT CONDUCTORS

Gallium nitride for liquid crystal electrodes

SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFACIAL CHARGE FOR COLUMN III-V MATERIALS ON COLUMN IV OR COLUMN IV-IV MATERIALS

Structure having silicon CMOS transistors with column III-V transistors on a common substrate

Semiconductor structure with layers having different hydrogen contents

Gallium nitride for liquid crystal electrodes

Boron aluminum nitride diamond heterostructure

SEMICONDUCTOR STRUCTURE HAVING PLURAL BACK-BARRIER LAYERS FOR IMPROVED CARRIER CONFINEMENT

Boron aluminum nitride diamond heterostructure

Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth

GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURE

Strain compensated high electron mobility transistor

Gallium nitride high electron mobility transistor structure