Emmaus, Pennsylvania
United States
22
2022-08-11
The entities that hold a legal rights for patent applications filed by inventor Pelzel Rodney:
Rodney Pelzel from Emmaus, US has applied for patents for these inventions. The list has both pending applications and granted patents:
POROUS RF SWITCH FOR REDUCED CROSSTALK
#2 | 2021-08-19STRAIN-BALANCED SEMICONDUCTOR STRUCTURE
#3 | 2021-01-21Semiconductor material having tunable permittivity and tunable thermal conductivity
#4 | 2020-08-20Pnictide nanocomposite structure for lattice stabilization
#5 | 2020-05-28Epitaxial metal oxide as buffer for epitaxial III-V layers
#6 | 2020-05-21III-N to rare earth transition in a semiconductor structure
#7 | 2019-10-03Epitaxial AIN/cREO structure for RF filter applications
#8 | 2019-07-25Re-based integrated photonic and electronic layered structures
#9 | 2019-07-18Porous distributed Bragg reflectors for laser applications
#10 | 2019-06-06Integrated epitaxial metal electrodes
#11 | 2019-05-23Strain-balanced semiconductor structure
#12 | 2019-05-09Pnictide buffer structures and devices for GaN base applications
#13 | 2019-04-25GROUP III SEMICONDUCTOR EPITAXY FORMED ON SILICON VIA SINGLE CRYSTAL REN AND REO BUFFER LAYERS
#14 | 2019-03-07Integrated epitaxial metal electrodes
#15 | 2019-01-24Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
#16 | 2019-01-24Metal electrode with tunable work functions
#17 | 2018-05-17Integrated epitaxial metal electrodes
#18 | 2018-01-11RARE EARTH INTERLAYS FOR MECHANICALLY LAYERING DISSIMILAR SEMICONDUCTOR WAFERS
#19 | 2017-12-07Rare earth pnictides for strain management
#20 | 2017-06-15III-NITRIDE STRUCTURES GROWN ON SILICON SUBSTRATES WITH INCREASED COMPRESSIVE STRESS
#21 | 2017-05-18Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
#22 | 2016-12-22Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs
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