Los Altos, California
United States
63
2026-05-21
The entities that hold a legal rights for patent applications filed by inventor Pan Yang:
Yang Pan from Los Altos, US has applied for patents for these inventions. The list has both pending applications and granted patents:
SELECTIVELY ETCHING FOR NANOWIRES
#2 | 2026-03-12PHOTORESIST DEVELOPMENT WITH HALIDE CHEMISTRIES
#3 | 2026-02-05METHOD FOR CLEANING A CHAMBER
#4 | 2025-12-11METHOD OF CLEANING CHAMBER COMPONENTS WITH METAL ETCH RESIDUES
#5 | 2025-07-31INTEGRATED DRY PROCESSES FOR PATTERNING RADIATION PHOTORESIST PATTERNING
#6 | 2025-07-03HIGH ENERGY ATOMIC LAYER ETCH OF A CARBON CONTAINING LAYER
#7 | 2025-06-26FAST ATOMIC LAYER ETCH
#8 | 2025-06-12ATOMIC LAYER ETCHING FOR SUBTRACTIVE METAL ETCH
#9 | 2025-03-13TIN OXIDE MANDRELS IN PATTERNING
#10 | 2024-12-26ATOMIC LAYER ETCH AND SELECTIVE DEPOSITION PROCESS FOR EXTREME ULTRAVIOLET LITHOGRAPHY RESIST IMPROVEMENT
#11 | 2024-12-26SACRIFICIAL PROTECTION LAYER FOR ENVIRONMENTALLY SENSITIVE SURFACES OF SUBSTRATES
#12 | 2024-12-19PHOTORESIST DEVELOPMENT WITH HALIDE CHEMISTRIES
#13 | 2024-10-31PHOTORESIST DEVELOPMENT WITH HALIDE CHEMISTRIES
#14 | 2024-10-03MULTI-STEP POST-EXPOSURE TREATMENT TO IMPROVE DRY DEVELOPMENT PERFORMANCE OF METAL-CONTAINING RESIST
#15 | 2024-09-12METHOD OF CLEANING CHAMBER COMPONENTS WITH METAL ETCH RESIDUES
#16 | 2024-08-15HIGH ENERGY ATOMIC LAYER ETCHING
#17 | 2024-08-01PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECTRICS
#18 | 2024-08-01PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECTRICS
#19 | 2024-06-20PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECTRICS
#20 | 2024-06-20PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECTRICS
#21 | 2024-06-06Atomic layer etching for subtractive metal etch
#22 | 2024-05-30PLASMA ETCHING CHEMISTRIES OF HIGH ASPECT RATIO FEATURES IN DIELECTRICS
#23 | 2024-05-02Integrated dry processes for patterning radiation photoresist patterning
#24 | 2024-01-25Sacrificial protection layer for environmentally sensitive surfaces of substrates
#25 | 2023-10-05METHOD OF FORMING PHOTO-SENSITIVE HYBRID FILMS
#26 | 2023-09-21SUBTRACTIVE COPPER ETCH
#27 | 2023-09-21LOW CEILING TEMPERATURE HOMOPOLYMERS AS SACRIFICIAL PROTECTION LAYERS FOR ENVIRONMENTALLY SENSITIVE SUBSTRATES
#28 | 2023-09-14Integrated dry processes for patterning radiation photoresist patterning
#29 | 2023-07-20METHOD FOR CLEANING A CHAMBER
#30 | 2023-06-15Plasma etching chemistries of high aspect ratio features in dielectrics
#31 | 2023-04-20SELECTIVE ETCH USING DEPOSITION OF A METALLOID OR METAL CONTAINING HARDMASK
#32 | 2023-02-09INTEGRATED DRY PROCESSES FOR PATTERNING RADIATION PHOTORESIST PATTERNING
#33 | 2022-12-08ATOMIC LAYER ETCHING AND SMOOTHING OF REFRACTORY METALS AND OTHER HIGH SURFACE BINDING ENERGY MATERIALS
#34 | 2022-11-24Chemical etch nonvolatile materials for MRAM patterning
#35 | 2022-08-25TIN OXIDE FILMS IN SEMICONDUCTOR DEVICE MANUFACTURING
#36 | 2022-08-11Atomic layer etch and ion beam etch patterning
#37 | 2022-08-04Photoresist development with halide chemistries
#38 | 2022-07-07Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
#39 | 2022-06-30Deposition of self assembled monolayer for enabling selective deposition and etch
#40 | 2022-06-23Atomic layer etching for subtractive metal etch
#41 | 2022-05-26Tin oxide films in semiconductor device manufacturing
#42 | 2022-03-03Resistive random access memory with preformed filaments
#43 | 2021-12-16Self-aligned vertical integration of three-terminal memory devices
#44 | 2021-09-02SELECTIVELY ETCHING FOR NANOWIRES
#45 | 2021-08-26Tin oxide mandrels in patterning
#46 | 2021-08-26TIN OXIDE FILMS IN SEMICONDUCTOR DEVICE MANUFACTURING
#47 | 2021-08-05Metal-containing passivation for high aspect ratio etch
#48 | 2021-01-07Plasma etching chemistries of high aspect ratio features in dielectrics
#49 | 2021-01-07Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
#50 | 2020-12-24HIGH ENERGY ATOMIC LAYER ETCHING
#51 | 2020-03-12Tin oxide films in semiconductor device manufacturing
#52 | 2019-08-08Etching substrates using ALE and selective deposition
#53 | 2019-08-01Tin oxide mandrels in patterning
#54 | 2019-04-11High energy atomic layer etching
#55 | 2018-11-29Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask
#56 | 2018-08-23Tin oxide films in semiconductor device manufacturing
#57 | 2018-08-16Directional deposition on patterned structures
#58 | 2018-08-16Ale smoothness: in and outside semiconductor industry
#59 | 2017-11-02Etching substrates using ale and selective deposition
#60 | 2017-10-05Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask
#61 | 2017-08-10Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
#62 | 2017-06-22DIRECTIONAL DEPOSITION ON PATTERNED STRUCTURES
#63 | 2017-03-09ALE smoothness: in and outside semiconductor industry
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