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Inventor profile of:

Fei Luo

City:

Shanghai

Country:

China

Published Applications:

Last publication date:

2021-11-09

Top Assignees for applications by Fei Luo

The entities that hold a legal rights for patent applications filed by inventor Luo Fei:

Bestechnic (Shanghai) Co., Ltd. 10 Shanghai, China
SHANGHAI HUALI MICROELECTRONICS CORPORATION 2 Shanghai, China
Shanghai Huali Microelectronics Corporation 2 Pudong, Shanghai, China
SHANGHAI HUALI MICROELECTRONICS CORPORATION 2 Pudong, China
Semiconductor Manufacturing International (Shanghai) Corporation 1 Shanghai, China

Recent patent applications by Luo Fei

Fei Luo from Shanghai, CN has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2021-11-09

US17161481

Electricity

Wireless audio system and method for wirelessly communicating audio information using the same

#2 | 2020-11-12

US20200359134A1

Electricity

Wireless audio system and method for wirelessly communicating audio information using the same

#3 | 2020-08-27

US20200275185A1

Electricity

Wireless audio system and method for wirelessly communicating audio information using the same

#4 | 2020-06-04

US20200177984A1

Electricity

Wireless audio system and method for wirelessly communicating audio information using the same

#5 | 2019-12-19

US20190387319A1

Electricity

Operation mode switch of wireless headphones

#6 | 2019-10-01

US16206767

Electricity

Wireless audio transceivers

#7 | 2019-09-10

US16299055

Electricity

Operation mode switch of wireless headphones

#8 | 2019-07-02

US16244056

Electricity

Wireless audio system and method for wirelessly communicating audio information using the same

#9 | 2019-06-06

US20190174232A1

Electricity

Operation mode switch of wireless headphones

#10 | 2019-02-05

US15992127

Electricity

Operation mode switch of wireless headphones

#11 | 2017-03-23

US20170082673A1

Physics

System, method and test layout for detecting leakage current

#12 | 2014-09-18

US20140273364A1

Electricity

Method of depositing the metal barrier layer comprising silicon dioxide

#13 | 2014-05-08

US20140127832A1

Electricity

Forming method of an annular storage unit of a magneto-resistive memory

#14 | 2014-02-18

US13728190

Method of dual-depth STI formation

#15 | 2008-06-19

US20080146030A1

Electricity

System and method for direct etching

InventorID:

1831069 ⎘