Peekskill, New York
United States
24
2020-11-19
The entities that hold a legal rights for patent applications filed by inventor Ortolland Claude:
Claude Ortolland from Peekskill, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Asymmetric high-k dielectric for reducing gate induced drain leakage
#2 | 2019-09-26Asymmetric high-k dielectric for reducing gate induced drain leakage
#3 | 2018-03-15Asymmetric high-k dielectric for reducing gate induced drain leakage
#4 | 2018-03-01Asymmetric high-k dielectric for reducing gate induced drain leakage
#5 | 2018-03-01Asymmetric high-k dielectric for reducing gate induced drain leakage
#6 | 2017-06-22Asymmetric high-k dielectric for reducing gate induced drain leakage
#7 | 2017-05-04Asymmetric high-k dielectric for reducing gate induced drain leakage
#8 | 2017-04-27Buffer layer for modulating Vt across devices
#9 | 2016-09-15Asymmetric high-K dielectric for reducing gate induced drain leakage
#10 | 2016-09-08Asymmetric high-k dielectric for reducing gate induced drain leakage
#11 | 2016-09-08Asymmetric high-K dielectric for reducing gate induced drain leakage
#12 | 2016-07-14Asymmetric high-K dielectric for reducing gate induced drain leakage
#13 | 2016-07-14Asymmetric high-k dielectric for reducing gate induced drain leakage
#14 | 2016-07-14Asymmetric high-k dielectric for reducing gate induced drain leakage
#15 | 2016-07-14Asymmetric high-K dielectric for reducing gate induced drain leakage
#16 | 2016-07-14Asymmetric high-k dielectric for reducing gate induced drain leakage
#17 | 2016-05-26Asymmetric high-k dielectric for reducing gate induced drain leakage
#18 | 2016-01-28Hydroxyl group termination for nucleation of a dielectric metallic oxide
#19 | 2016-01-07Control of O-ingress into gate stack dielectric layer using oxygen permeable layer
#20 | 2015-03-26Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistors
#21 | 2014-12-11Gate electrode with stabilized metal semiconductor alloy-semiconductor stack
#22 | 2014-12-11Gate electrode with stabilized metal semiconductor alloy-semiconductor stack
#23 | 2014-10-16Hydroxyl group termination for nucleation of a dielectric metallic oxide
#24 | 2013-04-11Effective Work Function Modulation by Metal Thickness and Nitrogen Ratio for a Last Approach CMOS Gate
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