Fishkill, New York
United States
26
2015-05-21
The entities that hold a legal rights for patent applications filed by inventor Wang Yanfeng:
Yanfeng Wang from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Replacement gate MOSFET with a high performance gate electrode
#2 | 2015-03-12Semiconductor-on-insulator device including stand-alone well implant to provide junction butting
#3 | 2015-03-12Semiconductor-on-insulator device including stand-alone well implant to provide junction butting
#4 | 2014-09-18Method and structure for dielectric isolation in a fin field effect transistor
#5 | 2014-09-04Work function adjustment by carbon implant in semiconductor devices including gate structure
#6 | 2014-07-03Concurrently forming nFET and pFET gate dielectric layers
#7 | 2014-05-01Semiconductor structure incorporating a contact sidewall spacer with a self-aligned airgap and a method of forming the semiconductor structure
#8 | 2014-03-06Partially-blocked well implant to improve diode ideality with SiGe anode
#9 | 2014-03-06Partially-blocked well implant to improve diode ideality with SiGe anode
#10 | 2014-01-02Composite high-k gate dielectric stack for reducing gate leakage
#11 | 2013-07-25On-chip poly-to-contact process monitoring and reliability evaluation system and method of use
#12 | 2013-07-25Programmable FETs using Vt-shift effect and methods of manufacture
#13 | 2013-07-11Replacement gate MOSFET with a high performance gate electrode
#14 | 2013-05-02Threshold Voltage Adjustment For Thin Body Mosfets
#15 | 2013-05-02Threshold voltage adjustment for thin body MOSFETs
#16 | 2013-04-25FinFET structure and method to adjust threshold voltage in a FinFET structure
#17 | 2013-04-11Work function adjustment by carbon implant in semiconductor devices including gate structure
#18 | 2012-07-05Structure and method to improve threshold voltage of MOSFETs including a high k dielectric
#19 | 2012-06-07Self-aligned contact combined with a replacement metal gate/high-K gate dielectric
#20 | 2012-05-03Replacement gate MOSFET with a high performance gate electrode
#21 | 2012-02-23Programmable FETs using Vt-shift effect and methods of manufacture
#22 | 2011-12-27Replacement metal gate method
#23 | 2011-12-08Interface structure for channel mobility improvement in high-k metal gate stack
#24 | 2009-12-03Structure and method for reducing threshold voltage variation
#25 | 2009-09-24STRUCTURE AND METHOD TO MAKE HIGH PERFORMANCE MOSFET WITH FULLY SILICIDED GATE
#26 | 2009-07-23Structure and method to fabricate MOSFET with short gate
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