Inventor profile of:

Yanfeng Wang

City:

Fishkill, New York

Country:

United States

Published Applications:

26

Last publication date:

2015-05-21

Top Assignees for applications by Yanfeng Wang

The entities that hold a legal rights for patent applications filed by inventor Wang Yanfeng:

Recent patent applications by Wang Yanfeng

Yanfeng Wang from Fishkill, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2015-05-21
US20150137269A1
Electricity

Replacement gate MOSFET with a high performance gate electrode

#2 | 2015-03-12
US20150072481A1
Electricity

Semiconductor-on-insulator device including stand-alone well implant to provide junction butting

#3 | 2015-03-12
US20150069513A1
Electricity

Semiconductor-on-insulator device including stand-alone well implant to provide junction butting

#4 | 2014-09-18
US20140264591A1
Electricity

Method and structure for dielectric isolation in a fin field effect transistor

#5 | 2014-09-04
US20140246727A1
Electricity

Work function adjustment by carbon implant in semiconductor devices including gate structure

#6 | 2014-07-03
US20140187028A1
Electricity

Concurrently forming nFET and pFET gate dielectric layers

#7 | 2014-05-01
US20140117420A1
Electricity

Semiconductor structure incorporating a contact sidewall spacer with a self-aligned airgap and a method of forming the semiconductor structure

#8 | 2014-03-06
US20140065807A1
Electricity

Partially-blocked well implant to improve diode ideality with SiGe anode

#9 | 2014-03-06
US20140061857A1
Electricity

Partially-blocked well implant to improve diode ideality with SiGe anode

#10 | 2014-01-02
US20140001570A1
Electricity

Composite high-k gate dielectric stack for reducing gate leakage

#11 | 2013-07-25
US20130191047A1
Electricity

On-chip poly-to-contact process monitoring and reliability evaluation system and method of use

#12 | 2013-07-25
US20130187244A1
Electricity

Programmable FETs using Vt-shift effect and methods of manufacture

#13 | 2013-07-11
US20130175641A1
Electricity

Replacement gate MOSFET with a high performance gate electrode

#14 | 2013-05-02
US20130105896A1
Electricity

Threshold Voltage Adjustment For Thin Body Mosfets

#15 | 2013-05-02
US20130105894A1
Electricity

Threshold voltage adjustment for thin body MOSFETs

#16 | 2013-04-25
US20130099313A1
Electricity

FinFET structure and method to adjust threshold voltage in a FinFET structure

#17 | 2013-04-11
US20130087859A1
Electricity

Work function adjustment by carbon implant in semiconductor devices including gate structure

#18 | 2012-07-05
US20120168874A1
Electricity

Structure and method to improve threshold voltage of MOSFETs including a high k dielectric

#19 | 2012-06-07
US20120139062A1
Electricity

Self-aligned contact combined with a replacement metal gate/high-K gate dielectric

#20 | 2012-05-03
US20120104469A1
Electricity

Replacement gate MOSFET with a high performance gate electrode

#21 | 2012-02-23
US20120043622A1
Electricity

Programmable FETs using Vt-shift effect and methods of manufacture

#22 | 2011-12-27
US12908016
-

Replacement metal gate method

#23 | 2011-12-08
US20110298060A1
Electricity

Interface structure for channel mobility improvement in high-k metal gate stack

#24 | 2009-12-03
US20090294923A1
Electricity

Structure and method for reducing threshold voltage variation

#25 | 2009-09-24
US20090236676A1
Electricity

STRUCTURE AND METHOD TO MAKE HIGH PERFORMANCE MOSFET WITH FULLY SILICIDED GATE

#26 | 2009-07-23
US20090184378A1
Electricity

Structure and method to fabricate MOSFET with short gate

InventorID:

183234 ⎘