David J. Howard

Method for Fabrication of Bonded Chiplets and Related Structure

Method for Integration of Chiplets and Related Structure

Low Resistivity Ohmic Contact to Group III-V Device

Radio Frequency (RF) Semiconductor-On-Insulator (SOI) Device with Improved Power Handling

Method of manufacturing bipolar complementary-metal-oxide-semiconductor (BiCMOS) devices using nickel silicide

Nickel Silicide in Bipolar Complementary-Metal-Oxide-Semiconductor (BiCMOS) Device

Method of manufacturing nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS)

Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device and method of manufacturing

Method for Forming a Semiconductor Structure Having a Porous Semiconductor Layer in RF Devices

Discrete and monolithic phase-change material (PCM) radio frequency (RF) switches with sheet of thermally conductive and electrically insulating material

Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devices

Semiconductor structure having through-substrate via (TSV) in porous semiconductor region

Semiconductor structure having porous semiconductor layer for RF devices

Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuits

Method for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches

Capacitive and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch

Method of tuning a radio frequency (RF) module including a non-volatile tunable RF filter

High-yield tunable radio frequency (RF) filter with auxiliary capacitors and non-volatile RF switches

Length-wise segmented slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches

Width-wise segmented slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches

Segmented slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches

Uniform plate slot contacts for improving performance in phase-change material (PCM) radio frequency (RF) switches

Phase-change material (PCM) RF switch with top metal contact to heating element

Phase-change material (PCM) RF switch having contacts to PCM and heating element

Phase-change material (PCM) RF switch with contacts to PCM and heating element

Method for fabricating contacts in a phase-change material (PCM) RF switch having a heating element

High reliability phase-change material (PCM) radio frequency (RF) switch using trap-rich region

Phase-change material (PCM) radio frequency (RF) switch

PCM RF switch with PCM contacts having slot lower portions

Phase-change material (PCM) radio frequency (RF) switches with trench metal plugs for RF terminals

Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled upper portions of RF terminals

Phase-change material (PCM) radio frequency (RF) switches with capacitive couplings between lower portions and upper portions of RF terminals

Using a shared material for fabrication of a phase-change material (PCM) switch and a resonator

Bonded two-die device including an integrated circuit (IC) die and a phase-change material (PCM) switch die

Read out integrated circuit (ROIC) for rapid testing of functionality of phase-change material (PCM) radio frequency (RF) switches

Non-volatile adjustable phase shifter using non-volatile radio frequency (RF) switch

Radio frequency (RF) filtering using phase-change material (PCM) RF switches

Radio frequency (RF) module using a tunable RF filter with non-volatile RF switches

Phase-change material RF switch

High reliability RF switch based on phase-change material

Read out integrated circuit (ROIC) for rapid testing and characterization of resistivity change of heating element in phase-change material (PCM) radio frequency (RF) switch

Integrated semiconductor device including RF isolation regions under phase-change material (PCM) radio frequency (RF) switches

Integrated semiconductor device including an electrically insulative substrate under an electrically conductive or semiconductive heat spreader and phase-change material (PCM) radio frequency (RF) switches

Semiconductor chips and systems having phase-change material (PCM) switches integrated with micro-electrical-mechanical systems (MEMS) and/or resonators

Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance

Heating element designs for phase-change material (PCM) radio frequency (RF) switches

Phase-change material (PCM) radio frequency (RF) switch with reduced parasitic capacitance

Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch

Phase-change material (PCM) contact configurations for improving performance in PCM RF switches

Phase-change material (PCM) contacts with slot lower portions and contact dielectric for reducing parasitic capacitance and improving manufacturability in PCM RF switches

Phase-change material (PCM) radio frequency (RF) switches

Method of manufacturing PCM RF switch

Fabrication of contacts in an RF switch having a phase-change material (PCM) and a heating element

Method of manufacturing phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer

Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated active devices

Semiconductor devices having phase-change material (PCM) radio frequency (RF) switches and integrated passive devices

Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches

Phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer

Phase-change material (PCM) radio frequency (RF) switch with reduced parasitic capacitance

Stacked phase-change material (PCM) radio frequency (RF) switches with improved RF power handling

Fabrication of semiconductor device using a shared material in a phase-change material (PCM) switch region and a resonator region

Device including PCM RF switch integrated with group III-V semiconductors

Wafer-to-wafer and die-to-wafer bonding of phase-change material (PCM) switches with integrated circuits and bonded two-die devices

Capacitive tuning circuit using RF switches with PCM capacitors and PCM contact capacitors

Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled RF terminals

Array architecture for large scale integration of phase-change material (PCM) radio frequency (RF) switches

Read out integrated circuit (ROIC) for rapid testing and characterization of conductivity skew of phase-change material (PCM) in PCM radio frequency (RF) switches

Integrated semiconductor device including an electrically insulative and thermally conductive substrate and phase-change material (PCM) radio frequency (RF) switches

Power amplifier module using phase-change material (PCM) radio frequency (RF) switches and selectable matching networks

Substrates and heat spreaders for heat management and RF isolation in integrated semiconductor devices having phase-change material (PCM) radio frequency (RF) switches

PCM RF switch fabrication with subtractively formed heater

Manufacturing RF switch based on phase-change material

High reliability RF switch based on phase-change material

Phase-change material (PCM) radio frequency (RF) switches with stressor layers and contact adhesion layers

High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applications

High performance SiGe heterojunction bipolar transistors built on thin film silicon-on-insulator substrates for radio frequency applications

Hybrid MEMs-floating gate device

Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method

Method Of Fabricating A Semiconductor Wafer Including A Through Substrate Via (TSV) And A Stepped Support Ring On A Back Side Of The Wafer

Fingerprint sensor with direct recording to non-volatile memory

Hybrid MOS-PCM CMOS SOI switch

Copper interconnect for improving radio frequency (RF) silicon-on-insulator (SOI) switch field effect transistor (FET) stacks

Thermally conductive and electrically isolating layers in semiconductor structures

Integration of thermally conductive but electrically isolating layers with semiconductor devices

Reduced substrate effects in monolithically integrated RF circuits

Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method

RF SOI switches including low dielectric constant features between metal line structures

Semiconductor Wafer Backside Metallization With Improved Backside Metal Adhesion

Integration of active devices with passive components and MEMS devices

Integration of active devices with passive components and MEMS devices

Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method

Light sensor with chemically resistant and robust reflector stack

Method of fabricating a semiconductor wafer including a through substrate via (TSV) and a stepped support ring on a back side of the wafer

Robust MEMS structure with via cap and related method

Scalable self-supported MEMS structure and related method

MEMS device with sealed cavity and release chamber and related double release method

MEMS device with sealed cavity and method for fabricating same

Heterojunction bipolar transistor having a germanium extrinsic base utilizing a sacrificial emitter post

Heterojunction bipolar transistor having a germanium raised extrinsic base

Anchor vias for improved backside metal adhesion to semiconductor substrate