San Jose, California
United States
18
2019-09-19
The entities that hold a legal rights for patent applications filed by inventor Worledge Daniel C.:
Daniel C. Worledge from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Thin reference layer for STT MRAM
#2 | 2019-08-08Magnetic exchange coupled MTJ free layer having low switching current and high data retention
#3 | 2018-12-13Magnetic exchange coupled MTJ free layer having low switching current and high data retention
#4 | 2018-12-13Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention
#5 | 2018-12-13Magnetic exchange coupled MTJ free layer having low switching current and high data retention
#6 | 2018-12-13Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention
#7 | 2018-11-01Magnetic field sensor based on topological insulator and insulating coupler materials
#8 | 2018-08-23Spin hall write select for magneto-resistive random access memory
#9 | 2018-07-12Growth of metal on a dielectric
#10 | 2018-04-17Spin hall write select for magneto-resistive random access memory
#11 | 2018-03-01Double spin filter tunnel junction
#12 | 2017-12-07Double spin filter tunnel junction
#13 | 2017-10-12Thin reference layer for STT MRAM
#14 | 2017-09-28Magnetic field sensor based on topological insulator and insulating coupler materials
#15 | 2017-06-29ENHANCEMENT OF SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE USING HYDROGEN PLASMA
#16 | 2017-06-08Growth of metal on a dielectric
#17 | 2017-04-06Double spin filter tunnel junction
#18 | 2017-04-06Double spin filter tunnel junction
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