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Inventor profile of:

Debdeep Jena

City:

Ithaca, New York

Country:

United States

Published Applications:

Last publication date:

2026-02-19

Top Assignees for applications by Debdeep Jena

The entities that hold a legal rights for patent applications filed by inventor Jena Debdeep:

CORNELL UNIVERSITY 18 Ithaca, NY United States
University of Notre Dame du Lac 2 Notre Dame, IN United States
UNIVERSITY OF NOTRE DAME DU LAC 1 South Bend, IN United States
The Government of the United States of America, as represented by the Secretary of the Navy 1 Washington, DC United States
Govmt. of U.S.—Navy 1 Washington, DC United States
University of Notre Dame due Lac 1 South Bend, IN United States
Soctera, Inc. 1 Ithaca, NY United States

Recent patent applications by Jena Debdeep

Debdeep Jena from Ithaca, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-02-19

US20260052744A1

Electricity

GROUP III-OXIDE DEVICES WITH SELECT SEMI-INSULATING AREAS

#2 | 2025-11-13

US20250350096A1

Electricity

DEVICES INCLUDING IIIxOz , AlyOz SUPERLATTICES

#3 | 2025-06-12

US20250194294A1

Electricity

BOTTOM TUNNEL JUNCTION LIGHT-EMITTING FIELD-EFFECT TRANSISTORS

#4 | 2025-06-12

US20250194189A1

Electricity

Devices with compositionally graded alloy layers

#5 | 2025-03-13

US20250089290A1

Electricity

CURRENT COLLAPSE REDUCTION USING ALUMINUM NITRIDE BACK BARRIER AND IN-SITU TWO-STEP PASSIVATION

#6 | 2024-05-30

US20240177042A1

Physics

Integrated Quantum Computing with Epitaxial Materials

#7 | 2023-11-23

US20230378276A1

Electricity

EPITAXIAL ScxAl1-xN SEMICONDUCTOR DEVICES

#8 | 2023-10-12

US20230326984A1

Electricity

Vertical gallium oxide (GA2O3) power FETs

#9 | 2023-06-22

US20230197883A1

Electricity

BOTTOM TUNNEL JUNCTION LIGHT-EMITTING FIELD-EFFECT TRANSISTORS

#10 | 2023-02-23

US20230054128A1

Physics

Resistive electrodes on ferroelectric devices for linear piezoelectric programming

#11 | 2022-09-15

US20220294189A1

Electricity

MONOLITHICALLY INVERTED III-V LASER DIODE REALIZED USING BURIED TUNNEL JUNCTION

#12 | 2022-06-23

US20220199782A1

Electricity

INTEGRATED ELECTRONICS ON THE ALUMINUM NITRIDE PLATFORM

#13 | 2021-12-09

US20210384362A1

Electricity

High voltage gallium oxide (GaO) trench MOS barrier schottky and methods of fabricating same

#14 | 2021-02-11

US20210043824A1

Electricity

Expitaxial semiconductor/superconductor heterostructures

#15 | 2021-02-11

US20210043795A1

Electricity

Platforms enabled by buried tunnel junction for integrated photonic and electronic systems

#16 | 2021-01-14

US20210013314A1

Electricity

Vertical gallium oxide (GA2O3) power FETs

#17 | 2020-12-10

US20200388701A1

Electricity

RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages

#18 | 2020-05-07

US20200144407A1

Electricity

High-voltage p-channel FET based on III-nitride heterostructures

#19 | 2019-05-16

US20190148593A1

Electricity

Polarization field assisted heterostructure design for efficient deep ultra-violet light emitting diodes

#20 | 2019-05-16

US20190148584A1

Electricity

Light emitting diodes using ultra-thin quantum heterostructures

#21 | 2017-05-04

US20170125555A1

Electricity

Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the same

#22 | 2017-05-04

US20170125521A1

Electricity

Group III-nitride compound heterojunction tunnel field-effect transistors and methods for making the same

InventorID:

1867740 ⎘