Inventor profile of:

JAMES ROBERT TODD

City:

PLANO, Texas

Country:

United States

Published Applications:

21

Last publication date:

2026-01-01

Top Assignees for applications by JAMES ROBERT TODD

The entities that hold a legal rights for patent applications filed by inventor TODD JAMES ROBERT:

Recent patent applications by TODD JAMES ROBERT

JAMES ROBERT TODD from PLANO, US has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2026-01-01
US20260005065A1
Electricity

DUMMY COMPONENTS IN INTEGRATED CIRCUITS

#2 | 2025-07-03
US20250221053A1
Electricity

INTEGRATED CIRCUIT DEVICE WITH ZENER DIODE WITH REDUCED LEAKAGE AND/OR INCREASED BREAKDOWN VOLTAGE

#3 | 2024-07-11
US20240230721A1
Physics

SEMICONDUCTOR-BASED SENSE RESISTOR

#4 | 2022-06-02
US20220173095A1
Electricity

Tracking temperature compensation of an x/y stress independent resistor

#5 | 2022-03-03
US20220068649A1
Electricity

BCD IC WITH GATE ETCH AND SELF-ALIGNED IMPLANT INTEGRATION

#6 | 2020-07-16
US20200227408A1
Electricity

Tracking temperature compensation of an x/y stress independent resistor

#7 | 2020-06-25
US20200203230A1
Electricity

Dynamic biasing to mitigate electrical stress in integrated resistors

#8 | 2020-03-12
US20200083336A1
Electricity

Drift region implant self-aligned to field relief oxide with sidewall dielectric

#9 | 2020-01-09
US20200013890A1
Electricity

Drain centered LDMOS transistor with integrated dummy patterns

#10 | 2020-01-02
US20200006550A1
Electricity

Protection of drain extended transistor field oxide

#11 | 2020-01-02
US20200006549A1
Electricity

Drain extended transistor

#12 | 2019-10-29
US16021772
Electricity

Drain centered LDMOS transistor with integrated dummy patterns

#13 | 2019-07-04
US20190207010A1
Electricity

SILICIDE BLOCK INTEGRATION FOR CMOS TECHNOLOGY

#14 | 2018-05-31
US20180151722A1
Electricity

LDMOS device with body diffusion self-aligned to gate

#15 | 2017-07-27
US20170213895A1
Electricity

Drift region implant self-aligned to field relief oxide with sidewall dielectric

#16 | 2017-07-27
US20170213893A1
Electricity

Drift region implant self-aligned to field relief oxide with sidewall dielectric

#17 | 2017-06-22
US20170179260A1
Electricity

LDMOS device with graded body doping

#18 | 2017-06-08
US20170162690A1
Electricity

LDMOS device with body diffusion self-aligned to gate

#19 | 2017-02-28
US15003776
Electricity

Drift region implant self-aligned to field relief oxide with sidewall dielectric

#20 | 2016-10-04
US14974951
Electricity

LDMOS device with graded body doping

#21 | 2010-02-11
US20100032769A1
Electricity

Implanted well breakdown in high voltage devices

InventorID:

1898489 ⎘