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Inventor profile of:

Hideyuki HATTA

City:

Tokyo

Country:

Japan

Published Applications:

24

Last publication date:

2025-04-10

Top Assignees for applications by Hideyuki HATTA

The entities that hold a legal rights for patent applications filed by inventor HATTA Hideyuki:

MITSUBISHI ELECTRIC CORPORATION 24 TOKYO, Japan
Mitsubishi Electric Corporation 2 Chiyoda-ku, Japan
MITSUBISHI ELECTRIC CORPORATION 2 Chiyoda-ku, Tokyo, Japan

Recent patent applications by HATTA Hideyuki

Hideyuki HATTA from Tokyo, JP has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2025-04-10

US20250120160A1

SEMICONDUCTOR DEVICE AND POWER CONVERTER

#2 | 2023-09-14

US20230290874A1

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AND POWER CONVERSION APPARATUS

#3 | 2023-07-06

US20230215942A1

SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

#4 | 2023-02-02

US20230032035A1

SEMICONDUCTOR MODULE

#5 | 2022-12-22

US20220406897A1

Silicon carbide semiconductor device, power conversion apparatus, and method for manufacturing silicon carbide semiconductor device

#6 | 2022-08-11

US20220254906A1

Silicon carbide semiconductor device and power converter

#7 | 2022-05-12

US20220149167A1

Semiconductor device and power converter

#8 | 2022-03-31

US20220102503A1

Silicon carbide semiconductor device and power converter

#9 | 2022-02-10

US20220045204A1

Silicon carbide semiconductor device and power converter

#10 | 2022-02-03

US20220037474A1

Silicon carbide semiconductor device and method of manufacturing same

#11 | 2022-01-06

US20220005947A1

Semiconductor device

#12 | 2021-09-16

US20210288156A1

Semiconductor device and power converter

#13 | 2021-07-22

US20210226052A1

Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same

#14 | 2021-05-06

US20210135002A1

Semiconductor device and power converter

#15 | 2021-02-11

US20210043765A1

Silicon carbide semiconductor device and manufacturing method of same

#16 | 2020-10-08

US20200321462A1

Silicon carbide semiconductor device and power converter

#17 | 2020-10-01

US20200312995A1

Silicon carbide semiconductor device and power converter

#18 | 2020-09-17

US20200295183A1

Semiconductor device

#19 | 2020-09-17

US20200295177A1

Silicon carbide semiconductor device and power converter

#20 | 2020-06-18

US20200194554A1

Silicon carbide semiconductor device, power converter, method of manufacturing silicon carbide semiconductor device, and method of manufacturing power converter

#21 | 2019-12-05

US20190371936A1

Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the same

#22 | 2019-12-05

US20190371935A1

Silicon carbide semiconductor device and power converter

#23 | 2019-06-13

US20190181259A1

Semiconductor device

#24 | 2017-08-10

US20170229535A1

Semiconductor device

InventorID:

1955485 ⎘