Lexington, Massachusetts
United States
10
2022-07-14
The entities that hold a legal rights for patent applications filed by inventor Schultz Brian D.:
Brian D. Schultz from Lexington, US has applied for patents for these inventions. The list has both pending applications and granted patents:
Strain compensated rare earth group III-nitride heterostructures
#2 | 2021-11-25Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers
#3 | 2021-11-11Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
#4 | 2021-07-01Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement
#5 | 2021-02-18Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation
#6 | 2020-10-15Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
#7 | 2018-10-04Group III-nitride structure having successively reduced crystallographic dislocation density regions
#8 | 2018-07-19Group III—nitride double-heterojunction field effect transistor
#9 | 2017-08-31Group III—nitride double-heterojunction field effect transistor
#10 | 2016-08-16Doped barrier layers in epitaxial group III nitrides
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