Sunnyvale, California
United States
32
2026-04-16
The entities that hold a legal rights for patent applications filed by inventor Sundar Vignesh:
Vignesh Sundar from Sunnyvale, US has applied for patents for these inventions. The list has both pending applications and granted patents:
DUAL MAGNETIC TUNNEL JUNCTION DEVICES FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
#2 | 2025-10-30Multilayer Structure for Reducing Film Roughness in Magnetic Devices
#3 | 2025-05-22MTJ DEVICE PERFORMANCE BY ADDING STRESS MODULATION LAYER TO MTJ DEVICE STRUCTURE
#4 | 2023-11-16MTJ device performance by adding stress modulation layer to MTJ device structure
#5 | 2023-03-02Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Memory (Mram)
#6 | 2022-12-01Silicon oxynitride based encapsulation layer for magnetic tunnel junctions
#7 | 2022-12-01Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)
#8 | 2022-12-01MTJ device performance by adding stress modulation layer to mtj device structure
#9 | 2022-11-10Post treatment to reduce shunting devices for physical etching process
#10 | 2021-12-02Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer
#11 | 2021-01-21Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
#12 | 2020-10-15Post treatment to reduce shunting devices for physical etching process
#13 | 2020-09-03Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)
#14 | 2020-07-30Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer
#15 | 2020-05-07Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
#16 | 2020-05-07Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)
#17 | 2020-04-30Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
#18 | 2020-04-23Silicon oxynitride based encapsulation layer for magnetic tunnel junctions
#19 | 2020-03-05MTJ device performance by adding stress modulation layer to MTJ device structure
#20 | 2019-12-31Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)
#21 | 2019-11-07Method for fabricating a magnetic tunneling junction (MTJ) structure
#22 | 2019-09-26Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer
#23 | 2019-09-12Post treatment to reduce shunting devices for physical etching process
#24 | 2019-08-01Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)
#25 | 2019-06-20Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
#26 | 2019-05-09Multilayer Structure for Reducing Film Roughness in Magnetic Devices
#27 | 2019-03-21Multilayer Structure for Reducing Film Roughness in Magnetic Devices
#28 | 2018-12-13Silicon oxynitride based encapsulation layer for magnetic tunnel junctions
#29 | 2018-11-15Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
#30 | 2018-10-11Post treatment to reduce shunting devices for physical etching process
#31 | 2018-04-03Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputtering
#32 | 2017-09-07Multilayer structure for reducing film roughness in magnetic devices
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