Valverde
Italy
26
2026-03-12
The entities that hold a legal rights for patent applications filed by inventor ZANETTI Edoardo:
Edoardo ZANETTI from Valverde, IT has applied for patents for these inventions. The list has both pending applications and granted patents:
MANUFACTURING PROCESS FOR SILICON CARBIDE POWER ELECTRONIC DEVICES HAVING AN IMPROVED INPUT CAPACITANCE DEFINITION OF THE SAME
#2 | 2025-09-18POWER MOSFET PROVIDED WITH A VARIABLE TRANSPARENCY EDGE RING FORMED BY A HIGH-DEPTH AUTO-ALIGNED IMPLANT
#3 | 2025-09-044H-SIC ELECTRONIC DEVICE WITH IMPROVED SHORT-CIRCUIT PERFORMANCES, AND MANUFACTURING METHOD THEREOF
#4 | 2025-06-19SILICON CARBIDE VERTICAL CONDUCTION MOSFET DEVICE FOR POWER APPLICATIONS AND MANUFACTURING PROCESS THEREOF
#5 | 2025-05-08MOSFET DEVICE WITH SHIELDING REGION AND MANUFACTURING METHOD THEREOF
#6 | 2024-09-05ELECTRONIC DEVICE WITH AUTO ALIGNED CSL AND EDGE TERMINATION STRUCTURE, AND MANUFACTURING METHOD THEREOF
#7 | 2024-09-05PROCESS FOR MANUFACTURING LOCALIZED ION IMPLANTS IN SILICON-CARBIDE POWER ELECTRONIC DEVICES
#8 | 2024-09-05PROCESS FOR MANUFACTURING A POWER ELECTRONIC DEVICE HAVING A CURRENT SPREADING LAYER
#9 | 2024-07-044H-SIC ELECTRONIC DEVICE WITH IMPROVED SHORT-CIRCUIT PERFORMANCES, AND MANUFACTURING METHOD THEREOF
#10 | 2024-05-16Manufacturing method of a semiconductor device with efficient edge structure
#11 | 2024-03-07SIC-BASED ELECTRONIC DEVICE WITH IMPROVED GATE DIELECTRIC AND MANUFACTURING METHOD THEREOF, DIODE
#12 | 2024-02-29SIC-BASED ELECTRONIC DEVICE WITH FUSE ELEMENT FOR SHORT-CIRCUITS PROTECTION, AND MANUFACTURING METHOD THEREOF
#13 | 2023-03-30Manufacturing method of a semiconductor device with efficient edge structure
#14 | 2022-10-274H-SIC MOSFET DEVICE AND MANUFACTURING METHOD THEREOF
#15 | 2022-08-04VERTICAL CONDUCTION ELECTRONIC DEVICE COMPRISING A JBS DIODE AND MANUFACTURING PROCESS THEREOF
#16 | 2022-08-04SILICON CARBIDE VERTICAL CONDUCTION MOSFET DEVICE AND MANUFACTURING PROCESS THEREOF
#17 | 2022-08-04Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereof
#18 | 2022-06-30SILICON CARBIDE MOSFET TRANSISTOR DEVICE WITH IMPROVED CHARACTERISTICS AND CORRESPONDING MANUFACTURING PROCESS
#19 | 2022-05-19MOSFET device with shielding region and manufacturing method thereof
#20 | 2021-12-234H—SiC electronic device with improved short-circuit performances, and manufacturing method thereof
#21 | 2021-08-12Manufacturing method of a semiconductor device with efficient edge structure
#22 | 2021-05-204H-SiC MOSFET device and manufacturing method thereof
#23 | 2020-02-06MOSFET device with shielding region and manufacturing method thereof
#24 | 2019-06-06Manufacturing method of a semiconductor device with efficient edge structure
#25 | 2013-04-18Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained
#26 | 2010-07-01Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained
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